Datasheet > 2N7000G_11

2N7000G_11

更新时间： 2022-03-30 22:26:02

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	98K
描述
Small Signal MOSFET 200 mAmps, 60 Volts N.Channel TO.92

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2N7000G_11 数据手册

2N7000G

Small Signal MOSFET

200 mAmps, 60 Volts

N−Channel TO−92

Features

http://onsemi.com

• AEC Qualified

200 mAMPS

60 VOLTS

R_DS(on)= 5 W

• PPAP Capable

• This is a Pb−Free Device*

N−Channel

MAXIMUM RATINGS

Rating

Drain Source Voltage

Symbol

Value

Unit

Vdc

DSS

Drain−Gate Voltage (R = 1.0 MW)

DGR

Gate−Source Voltage

− Continuous

GSM

ꢀ20

ꢀ40

Vdc

Vpk

− Non−repetitive (t ≤ 50 ms)

Drain Current

− Continuous

− Pulsed

mAdc

200

500

TO−92

CASE 29

STYLE 22

Total Power Dissipation @ T = 25°C

350

2.8

mW/°C

Derate above 25°C

Operating and Storage Temperature

Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

Symbol

Max

357

300

Unit

°C/W

°C

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

MARKING DIAGRAM

AND PIN ASSIGNMENT

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

7000

AYWW G

Source

Drain

Gate

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

April, 2011 − Rev. 8

2N7000/D

12 3 4

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