Datasheet > 2N7000-GPO14

2N7000-GPO14

更新时间： 2024-11-19 01:05:27

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	666K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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2N7000-GPO14 数据手册

Supertex inc.

2N7000

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

The Supertex 2N7000 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

(max)

I_D(ON)

(min)

Part Number

Package Option Packing

BV_DSX/BV_DGS

2N7000-G

TO-92

1000/Bag

2000/Reel

60V

5.0Ω

75mA

2N7000-G P002

2N7000-G P003

2N7000-G P005

2N7000-G P013

2N7000-G PO14

Pin Conﬁguration

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

GATE

TO-92

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±30V

Product Marking

Drain-to-Source voltage

Drain-to-Gate voltage

S i 2 N

7 0 0 0

YYWW

YY = Year Sealed

WW = Week Sealed

Gate-to-Source voltage

= “Green” Packaging

Operating and storage temperature

-55°C to +150°C

Package may or may not include the following marks: Si or

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-92

Typical Thermal Characteristics

Package

θ_ja

TO-92

132^OC/W

* Mounted on FR4 board; 25mm x 25mm x 1.57mm

Doc.# DSFP-2N7000

C062813

Supertex inc.

www.supertex.com

12 3 4 5

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与2N7000-GPO14相关器件

型号	品牌	获取价格	描述	数据表
2N7000G-T92-B	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
2N7000G-T92-K	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
2N7000G-T92-R	UTC	获取价格	N-CHANNEL ENHANCEMENT MODE
2N7000J22Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
2N7000J59Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
2N7000K	KEC	获取价格	N Channel MOSFET ESD Protected 2000V
2N7000KL	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
2N7000KLE3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2N7000KL-TR1	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
2N7000KL-TR1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.47A I(D), 60V, 1-Element, N-Channel, Silicon, Meta

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