Datasheet > 2N7000-GP005

2N7000-GP005

更新时间： 2024-02-12 22:14:49

品牌	Logo	应用领域
超科 - SUPERTEX		开关晶体管
页数	文件大小	规格书
5页	666K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N7000-GP005 技术参数

生命周期：	Active	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	compliant	风险等级：	5.56
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	0.2 A	最大漏源导通电阻：	5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	5 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N7000-GP005 数据手册

Supertex inc.

2N7000

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

The Supertex 2N7000 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

(max)

I_D(ON)

(min)

Part Number

Package Option Packing

BV_DSX/BV_DGS

2N7000-G

TO-92

1000/Bag

2000/Reel

60V

5.0Ω

75mA

2N7000-G P002

2N7000-G P003

2N7000-G P005

2N7000-G P013

2N7000-G PO14

Pin Conﬁguration

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

GATE

TO-92

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±30V

Product Marking

Drain-to-Source voltage

Drain-to-Gate voltage

S i 2 N

7 0 0 0

YYWW

YY = Year Sealed

WW = Week Sealed

Gate-to-Source voltage

= “Green” Packaging

Operating and storage temperature

-55°C to +150°C

Package may or may not include the following marks: Si or

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-92

Typical Thermal Characteristics

Package

θ_ja

TO-92

132^OC/W

* Mounted on FR4 board; 25mm x 25mm x 1.57mm

Doc.# DSFP-2N7000

C062813

Supertex inc.

www.supertex.com

12 3 4 5

下载PDF

与2N7000-GP005相关器件

型号	品牌	描述	获取价格	数据表
2N7000-GP013	MICROCHIP	SMALL SIGNAL, FET	获取价格
2N7000-GP013	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
2N7000-GPO14	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
2N7000G-T92-B	UTC	N-CHANNEL ENHANCEMENT MODE	获取价格
2N7000G-T92-K	UTC	N-CHANNEL ENHANCEMENT MODE	获取价格
2N7000G-T92-R	UTC	N-CHANNEL ENHANCEMENT MODE	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

2N7000-GP005

2N7000-GP005 技术参数

2N7000-GP005 数据手册

与2N7000-GP005相关器件

与2N7000-GP005相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N7000-GP005

2N7000-GP005 技术参数

2N7000-GP005 数据手册

与2N7000-GP005相关器件

与2N7000-GP005相关文章

您还可以找

您在本页遇到什么问题？