Datasheet > 28C256TRT2DS-20

28C256TRT2DS-20

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
麦斯威 - MAXWELL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	262K
描述
EEPROM

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中文翻译

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数据手册

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28C256TRT2DS-20 数据手册

28C256T

256K EEPROM (32K x 8-Bit)

28C256T

Logic Diagram

FEATURES:

DESCRIPTION:

•

RAD-PAK® radiation-hardened against natural space radia-

tion

Total dose hardness:

- > 100 Krad (Si), dependent upon space mission

Excellent Single Event Effects @ 25C:

- SEL_THLET: (Device)> 120MeV cm^2/mg

- SEU_THLET (Memory Cells): > 90 MeV cm^2/mg

- SEU_THLET (Write mode): > 18 MeV cm^2/mg

- SEU_THLET (Read mode): > 40 MeV cm^2/mg

Package:

- 28 pin R^AD-PAK® flat pack

- 28 pin R^AD-PAK® DIP

- JEDEC approved byte wide pinout

High Speed:

- 120, 150, and 200 ns maximum access times available

High endurance:

Maxwell Technologies’ 28C256T high density 256k-bit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28C256T is capable of in-system electrical byte and page pro-

grammability. It has a 64-Byte page programming function to

make its erase and write operations faster. It also features

data polling to indicate the completion of erase and program-

ming operations.

•

Maxwell Technologies' patented R^AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R^AD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Maxwells’ Class S.

•

- 10,000 erase/write (in Page Mode), 10-year data

retention

•

Page Write Mode:

- 1 to 64 bytes

Low power dissipation:

- 15mA active current (cycle = 1 µs)

- 20µA standby current (CE = V_CC

)

03.20.15 Rev 6

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

12 3 4 5 6 7...14

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