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28C256TRT2FB-15 PDF预览

28C256TRT2FB-15

更新时间: 2024-11-23 22:11:47
品牌 Logo 应用领域
麦斯威 - MAXWELL 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 275K
描述
256K EEPROM (32K x 8-Bit) EEPROM

28C256TRT2FB-15 技术参数

生命周期:Contact Manufacturer零件包装代码:DFP
包装说明:DFP,针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.11
Is Samacsys:N最长访问时间:150 ns
JESD-30 代码:R-XDFP-F28长度:18.288 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:4.8006 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
总剂量:25k Rad(Si) V宽度:10.414 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

28C256TRT2FB-15 数据手册

 浏览型号28C256TRT2FB-15的Datasheet PDF文件第2页浏览型号28C256TRT2FB-15的Datasheet PDF文件第3页浏览型号28C256TRT2FB-15的Datasheet PDF文件第4页浏览型号28C256TRT2FB-15的Datasheet PDF文件第5页浏览型号28C256TRT2FB-15的Datasheet PDF文件第6页浏览型号28C256TRT2FB-15的Datasheet PDF文件第7页 
28C256T  
256K EEPROM (32K x 8-Bit)  
EEPROM  
DATA INPUTS/ OUTPUTS  
I/ O0 - I/ O7  
V
CC  
GND  
OE  
WE  
CE  
DATA LATCH  
OE, CE, a nd WE  
LOGIC  
INPUT/ OUTPUT  
BUFFERS  
Y DECODER  
Y-GATING  
CELL MATRIX  
IDENTIFICATION  
ADDRESS  
INPUTS  
X DECODER  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® radiation-hardened against natural space radia-  
tion  
Total dose hardness:  
Maxwell Technologies’ 28C256T high density 256k-bit  
EEPROM microcircuit features a greater than 100 krad (Si)  
total dose tolerance, depending upon space mission. The  
28C256T is capable of in-system electrical byte and page pro-  
grammability. It has a 64-Byte page programming function to  
make its erase and write operations faster. It also features  
data polling to indicate the completion of erase and program-  
ming operations.  
- > 100 Krad (Si), dependent upon space mission  
• Excellent Single Event Effects:  
- SEL LET: > 120 MeV/mg/cm2  
TH  
- SEUTH LET (read mode): > 90 MeV/mg/cm2  
- SEUTH LET (write mode): > 18 MeV/mg/cm2  
• Package:  
- 28 pin RAD-PAK® flat pack  
- 28 pin RAD-PAK® DIP  
- JEDEC approved byte wide pinout  
High Speed:  
- 120, 150 ns maximum access times available  
High endurance:  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- 10,000 erase/write (in Page Mode), 10-year data  
retention  
• Page Write Mode:  
- 1 to 64 bytes  
Low power dissipation:  
- 15 mA active current (cycle = 1 µs)  
- 20 µA standby current (CE = V )  
CC  
1
02.18.02 Rev 5  
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2001 Maxwell Technologies  
All rights reserved.  

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