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28C256TRT4DI-12 PDF预览

28C256TRT4DI-12

更新时间: 2024-11-19 22:15:55
品牌 Logo 应用领域
麦斯威 - MAXWELL 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 275K
描述
256K EEPROM (32K x 8-Bit) EEPROM

28C256TRT4DI-12 技术参数

生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.29
最长访问时间:120 nsJESD-30 代码:R-XDIP-T28
长度:35.56 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:32KX8
封装主体材料:UNSPECIFIED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified座面最大高度:5.715 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL总剂量:40k Rad(Si) V
宽度:15.24 mm最长写入周期时间 (tWC):10 ms

28C256TRT4DI-12 数据手册

 浏览型号28C256TRT4DI-12的Datasheet PDF文件第2页浏览型号28C256TRT4DI-12的Datasheet PDF文件第3页浏览型号28C256TRT4DI-12的Datasheet PDF文件第4页浏览型号28C256TRT4DI-12的Datasheet PDF文件第5页浏览型号28C256TRT4DI-12的Datasheet PDF文件第6页浏览型号28C256TRT4DI-12的Datasheet PDF文件第7页 
28C256T  
256K EEPROM (32K x 8-Bit)  
EEPROM  
DATA INPUTS/ OUTPUTS  
I/ O0 - I/ O7  
V
CC  
GND  
OE  
WE  
CE  
DATA LATCH  
OE, CE, a nd WE  
LOGIC  
INPUT/ OUTPUT  
BUFFERS  
Y DECODER  
Y-GATING  
CELL MATRIX  
IDENTIFICATION  
ADDRESS  
INPUTS  
X DECODER  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® radiation-hardened against natural space radia-  
tion  
Total dose hardness:  
Maxwell Technologies’ 28C256T high density 256k-bit  
EEPROM microcircuit features a greater than 100 krad (Si)  
total dose tolerance, depending upon space mission. The  
28C256T is capable of in-system electrical byte and page pro-  
grammability. It has a 64-Byte page programming function to  
make its erase and write operations faster. It also features  
data polling to indicate the completion of erase and program-  
ming operations.  
- > 100 Krad (Si), dependent upon space mission  
• Excellent Single Event Effects:  
- SEL LET: > 120 MeV/mg/cm2  
TH  
- SEUTH LET (read mode): > 90 MeV/mg/cm2  
- SEUTH LET (write mode): > 18 MeV/mg/cm2  
• Package:  
- 28 pin RAD-PAK® flat pack  
- 28 pin RAD-PAK® DIP  
- JEDEC approved byte wide pinout  
High Speed:  
- 120, 150 ns maximum access times available  
High endurance:  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- 10,000 erase/write (in Page Mode), 10-year data  
retention  
• Page Write Mode:  
- 1 to 64 bytes  
Low power dissipation:  
- 15 mA active current (cycle = 1 µs)  
- 20 µA standby current (CE = V )  
CC  
1
02.18.02 Rev 5  
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2001 Maxwell Technologies  
All rights reserved.  

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