Datasheet > 25PT12SM

25PT12SM

更新时间： 2024-10-28 11:46:15

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
6页	823K
描述
Medium Power Thyristors (Stud Version), 25A

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数据手册

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25PT12SM 数据手册

RoHS

25PTS Series ^RoHS

SEMICONDUCTOR

Nell High Power Products

Fig.5 Maximum non-repetitive surge current

Fig.6 Maximum non-repetitive surge cCurrent

375

450

At Any Rated Load Condition And With

Maximum Non Repetitive Surge Current

Rated V

Applied Following Surge.

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained

425

400

RRM

350

325

Initial T = 125°C

@60 Hz 0.0083 s

@50 Hz 0.0100 s

Initial TJ = 125°C

No Voltage Reapplied

Reted VRRM Reapplied

375

350

325

300

275

300

275

250

225

250

225

200

175

150

25PTS Series

200

175

100

0.1

Pulse train duration (S)

0.01

Number of equal amplitude half cycle current pulses(N)

Fig.7 Forward voltage drop characterisics

Fig.8 Thermal Impedance Z_thJCcharacteristics

1000

Steady State Value

RthJC = 1.5K/W

(DC Operation)

25PTS Series

100

0.1

= 25°C

25PTS Series

= 175°C

0.01

0.001

0.5

1.5

2.5

3.5

0.01

0.1

Instantaneous on-state voltage (V)

Square wave pulse duration (s)

Fig.9 Gate characteristics

100

(1) PGM = 16W, tp = 4ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 60W, tp = 1ms

Rectangular gate pulse

(a) Recommended load line for

rated di/dt: 10V, 20ohms

tr<=0.5µs, tq>= 6µs

(b) Recommended load line for

<=30%rated di/dt: 10V, 60ohms

tr<=1µs, tq>= 6µs

(a)

(b)

(4)

(3)

(2)

(1)

VGD

IGD

25PTS Series frequency limited by PG(AV)

0.1

0.001

0.01

0.1

100

lnstantaneous gate current (A)

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