RoHS
25PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 25A
Main Features
2
Symbol
Value
25
Unit
IT(RMS)
A
1
2
1
2
3
3
VDRM/VRRM
IGT
V
600 to 1200
4 to 40
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
mA
(25PTxxA)
(25PTxxAI)
A2
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
2(A)
A1
A2
3(G)
1(K)
G
TO-263 (D2PAK)
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(25PTxxH)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=100°C
TO-263/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
A
25
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
Average on-state current
(180° conduction angle)
IT(AV)
16
300
314
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
450
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
50
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Tp =20µs
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
Tj =125ºC
Tj =125ºC
VDRM
VRRM
Tstg
600 to 1200
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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