RoHS
25PTS Series RoHS
SEMICONDUCTOR
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
VALUES
25
UNITS
TEST CONDITIONS
A
ºC
A
Maximum average forward current
at case temperature
IT(AV)
180° conduction, half sine wave
85
40
IT(RMS)
Maximum RMS forward current
420
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
Maximum peak, one-cycle
non-reptitive surge current
440
350
ITSM
A
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
370
882
804
625
569
No voltage
reapplied
A2s
A2√s
V
I2t
Maximum l²t for fusing
100%VRRM
reapplied
t = 8.3ms
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
I2√t
Maximum l²√t for fusing
8820
0.99
(16.7 % x πx lT(AV)< l <πx lT(AV)),
TJ = TJ maximum
VT(TO)1
Low level value of threshold voltage
High level value of threshold voltage
(l >πx lT(AV)),
TJ = TJ maximum
VT(TO)2
1.40
(16.7 % x πx lT(AV)< l <πx lT(AV)),
Low level value of
on-state slope resistance
rt1
rt2
10.1
5.7
TJ = TJ maximum
mΩ
High level value of
on-state slope resistance
(l >πx lT(AV)),
TJ = TJ maximum
lpk = 79 A, TJ = 25°C
Maximum on-state voltage
Maximum holding current
Latching current
VTM
lH
1.70
130
200
V
TJ = 25 °C, anode supply 6 V, resistive load
mA
lL
SWITCHING
PARAMETER
SYMBOL
VALUES
UNITS
TEST CONDITIONS
Maximum rate of rise
TJ = TJ maximum, VDM = 2/3 VDRM, tP = 200 µs
IG = 0.3A, dIG/dt = 0.3 A/us, TJ = 125 °C
TJ = 25 °C,
at rated VDRM/VRRM, TJ = 125 °C
TJ = TJ maximum,
A/µs
dl/dt
150
of turned-on current
tgt
trr
Typical turn-on time
0.9
4
Typical reverse recovery time
ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs
µs
TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,
tq
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM
,
Typical turn-off time
110
gate bias 0 V to 100 V
Note
tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
of off-state voltage
TJ = TJ maximum linear to 67 % rated VDRM, gate open
dV/dt
1000
V/µs
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