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25PT12SM PDF预览

25PT12SM

更新时间: 2024-10-28 11:46:15
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
6页 823K
描述
Medium Power Thyristors (Stud Version), 25A

25PT12SM 数据手册

 浏览型号25PT12SM的Datasheet PDF文件第1页浏览型号25PT12SM的Datasheet PDF文件第3页浏览型号25PT12SM的Datasheet PDF文件第4页浏览型号25PT12SM的Datasheet PDF文件第5页浏览型号25PT12SM的Datasheet PDF文件第6页 
RoHS  
25PTS Series RoHS  
SEMICONDUCTOR  
Nell High Power Products  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
VALUES  
25  
UNITS  
TEST CONDITIONS  
A
ºC  
A
Maximum average forward current  
at case temperature  
IT(AV)  
180° conduction, half sine wave  
85  
40  
IT(RMS)  
Maximum RMS forward current  
420  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
No voltage  
reapplied  
Maximum peak, one-cycle  
non-reptitive surge current  
440  
350  
ITSM  
A
100%VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ = TJ maximum  
370  
882  
804  
625  
569  
No voltage  
reapplied  
A2s  
A2s  
V
I2t  
Maximum l²t for fusing  
100%VRRM  
reapplied  
t = 8.3ms  
t = 0.1 to 10 ms, no voltage reapplied,  
TJ = TJ maximum  
I2t  
Maximum l²t for fusing  
8820  
0.99  
(16.7 % x πx lT(AV)< l <πx lT(AV)),  
TJ = TJ maximum  
VT(TO)1  
Low level value of threshold voltage  
High level value of threshold voltage  
(l >πx lT(AV)),  
TJ = TJ maximum  
VT(TO)2  
1.40  
(16.7 % x πx lT(AV)< l <πx lT(AV)),  
Low level value of  
on-state slope resistance  
rt1  
rt2  
10.1  
5.7  
TJ = TJ maximum  
mΩ  
High level value of  
on-state slope resistance  
(l >πx lT(AV)),  
TJ = TJ maximum  
lpk = 79 A, TJ = 25°C  
Maximum on-state voltage  
Maximum holding current  
Latching current  
VTM  
lH  
1.70  
130  
200  
V
TJ = 25 °C, anode supply 6 V, resistive load  
mA  
lL  
SWITCHING  
PARAMETER  
SYMBOL  
VALUES  
UNITS  
TEST CONDITIONS  
Maximum rate of rise  
TJ = TJ maximum, VDM = 2/3 VDRM, tP = 200 µs  
IG = 0.3A, dIG/dt = 0.3 A/us, TJ = 125 °C  
TJ = 25 °C,  
at rated VDRM/VRRM, TJ = 125 °C  
TJ = TJ maximum,  
A/µs  
dl/dt  
150  
of turned-on current  
tgt  
trr  
Typical turn-on time  
0.9  
4
Typical reverse recovery time  
ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs  
µs  
TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,  
tq  
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM  
,
Typical turn-off time  
110  
gate bias 0 V to 100 V  
Note  
tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request  
BLOCKING  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum critical rate of rise  
of off-state voltage  
TJ = TJ maximum linear to 67 % rated VDRM, gate open  
dV/dt  
1000  
V/µs  
Page 2 of 6  
www.nellsemi.com  

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