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24C01CTE/ST PDF预览

24C01CTE/ST

更新时间: 2024-11-01 15:24:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
36页 957K
描述
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8

24C01CTE/ST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.15
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):1 ms
Base Number Matches:1

24C01CTE/ST 数据手册

 浏览型号24C01CTE/ST的Datasheet PDF文件第2页浏览型号24C01CTE/ST的Datasheet PDF文件第3页浏览型号24C01CTE/ST的Datasheet PDF文件第4页浏览型号24C01CTE/ST的Datasheet PDF文件第5页浏览型号24C01CTE/ST的Datasheet PDF文件第6页浏览型号24C01CTE/ST的Datasheet PDF文件第7页 
24C01C  
1K 5.0V I2C™ Serial EEPROM  
Features:  
Description:  
• Single Supply with Operation from 4.5V to 5.5V  
• Low-Power CMOS Technology:  
- Read current 1 mA, max.  
The Microchip Technology Inc. 24C01C is a 1K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 128 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
max. standby and active currents of only 5 A and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes. Func-  
tional address lines allow the connection of up to eight  
24C01C devices on the same bus for up to 8K bits of  
contiguous EEPROM memory. The device is available  
in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm),  
8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP  
packages. The 24C01C is also available in the 6-lead  
SOT-23 package.  
- Standby current 5 A, max.  
• 2-Wire Serial Interface, I2C™ Compatible  
• Cascadable up to Eight Devices  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Page Write Time 1 ms max.  
• Self-Timed Erase/Write Cycle  
• 16-Byte Page Write Buffer  
• ESD Protection >4000V  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
Block Diagram  
• Factory Programming Available  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN, MSOP and 6-lead SOT-23  
A0 A1 A2  
HV Generator  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
- Industrial (I):  
-40C to +85C  
-40C to +125C  
EEPROM  
Array  
- Automotive (E):  
XDEC  
SDA  
SCL  
VCC  
YDEC  
VSS  
Sense Amp.  
R/W Control  
Package Types  
PDIP, MSOP  
SOT-23  
DFN/TDFN  
SOIC, TSSOP  
VCC  
A0  
SCL  
VSS  
6
1
2
3
1
VCC  
Test  
SCL  
SDA  
A0  
A1  
8
7
6
5
A0  
1
8
VCC  
A0  
1
2
8
7
VCC  
Test  
SCL  
SDA  
2
3
4
5
A1  
A2  
2
3
7
6
Test  
A1  
A2  
VSS  
SCL  
A2  
4
3
4
6
5
A1  
SDA  
VSS  
4
5
SDA  
VSS  
1997-2012 Microchip Technology Inc.  
DS21201K-page 1  

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