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24C01CT-I/MNY PDF预览

24C01CT-I/MNY

更新时间: 2024-11-01 13:03:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 80K
描述
128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8

24C01CT-I/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:5 weeks
风险等级:1.16最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-N8
JESD-609代码:e4长度:3 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:0.8 mm
串行总线类型:I2C最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):1 msBase Number Matches:1

24C01CT-I/MNY 数据手册

 浏览型号24C01CT-I/MNY的Datasheet PDF文件第2页浏览型号24C01CT-I/MNY的Datasheet PDF文件第3页浏览型号24C01CT-I/MNY的Datasheet PDF文件第4页浏览型号24C01CT-I/MNY的Datasheet PDF文件第5页浏览型号24C01CT-I/MNY的Datasheet PDF文件第6页浏览型号24C01CT-I/MNY的Datasheet PDF文件第7页 
24C01A/02A/04A  
2
1K/2K/4K 5.0V I C Serial EEPROMs  
FEATURES  
PACKAGE TYPES  
• Low power CMOS technology  
• Hardware write protect  
• Two wire serial interface bus, I2C compatible  
DIP  
A0  
A1  
1
2
8
7
VCC  
WP*  
• 5.0V only operation  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer  
A2  
3
4
6
5
SCL  
SDA  
VSS  
• 1ms write cycle time for single byte  
• 1,000,000 Erase/Write cycles guaranteed  
• Data retention >200 years  
8-lead  
SOIC  
1
8
• 8-pin DIP/SOIC packages  
A0  
A1  
VCC  
• Available for extended temperature ranges  
2
3
4
7
6
5
WP*  
SCL  
SDA  
- Commercial (C):  
- Industrial (I):  
- Automotive (E):  
0˚C to +70˚C  
-40˚C to +85˚C  
-40˚C to +125˚C  
A2  
DESCRIPTION  
VSS  
The Microchip Technology Inc. 24C01A/02A/04A is a  
1K/2K/4K bit Electrically Erasable PROM. The device  
is organized as shown, with a standard two wire serial  
interface. Advanced CMOS technology allows a signif-  
icant reduction in power over NMOS serial devices. A  
special feature in the 24C02A and 24C04A provides  
hardware write protection for the upper half of the block.  
The 24C01A and 24C02A have a page write capability  
of two bytes and the 24C04A has a page length of eight  
bytes. Up to eight 24C01A or 24C02A devices and up  
to four 24C04A devices may be connected to the same  
two wire bus.  
14-lead  
SOIC  
14  
1
NC  
NC  
A0  
13  
12  
11  
2
3
4
5
6
7
VCC  
WP  
NC  
A1  
NC  
10  
9
SCL  
SDA  
NC  
A2  
VSS  
NC  
8
* “TEST” pin in 24C01A  
This device offers fast (1ms) byte write and  
extended (-40°C to 125°C) temperature operation. It  
is recommended that all other applications use  
Microchip’s 24LCXXB.  
BLOCK DIAGRAM  
Data  
Buffer  
(FIFO)  
24C01A  
24C02A  
24C04A  
Vcc  
Vpp  
R/W Amp  
Vss  
Organization  
Write Protect  
128 x 8  
None  
258 x 8  
080-0FF  
2 Bytes  
2 x 256 x 8  
100-1FF  
8 Bytes  
Data Reg.  
A P  
d o  
Page Write  
Buffer  
2 Bytes  
Memory  
Array  
d
r
i
n
t
SDA  
Slave Addr.  
A0 to  
A7  
e
s e  
s
r
Control  
Logic  
Increment  
SCL  
A8  
A0 A1 A2 WP  
I2C is a trademark of Philips Corporation.  
1996 Microchip Technology Inc.  
DS11183D-page 1  
This document was created with FrameMaker 4 0 4  

24C01CT-I/MNY 替代型号

型号 品牌 替代类型 描述 数据表
24C01CT-E/MNY MICROCHIP

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128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC

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