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24C01CT-I/SN PDF预览

24C01CT-I/SN

更新时间: 2024-11-01 04:25:23
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管双倍数据速率可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 371K
描述
1K 5.0V I2C ⑩ Serial EEPROM

24C01CT-I/SN 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantFactory Lead Time:8 weeks
风险等级:1.37Is Samacsys:N
其他特性:DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:I2C最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):1 msBase Number Matches:1

24C01CT-I/SN 数据手册

 浏览型号24C01CT-I/SN的Datasheet PDF文件第2页浏览型号24C01CT-I/SN的Datasheet PDF文件第3页浏览型号24C01CT-I/SN的Datasheet PDF文件第4页浏览型号24C01CT-I/SN的Datasheet PDF文件第5页浏览型号24C01CT-I/SN的Datasheet PDF文件第6页浏览型号24C01CT-I/SN的Datasheet PDF文件第7页 
24C01C  
1K 5.0V I2CSerial EEPROM  
Features:  
Package Types  
SOIC, TSSOP  
• Single supply with operation from 4.5 to 5.5V  
• Low-power CMOS technology:  
PDIP, MSOP  
A0  
1
8
VCC  
1
2
8
7
A0  
A1  
VCC  
Test  
SCL  
SDA  
- Read current 1 mA, typical  
A1  
A2  
2
3
7
6
Test  
SCL  
- Standby current 10 μA, typical  
• 2-wire serial interface, I2C™ compatible  
• Cascadable up to eight devices  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz and 400 kHz clock compatibility  
• Fast page and byte write time 1 ms, typical  
• Self-timed erase/write cycle  
3
4
6
5
A2  
VSS  
4
5
SDA  
VSS  
DFN  
1
VCC  
Test  
SCL  
SDA  
A0  
A1  
8
7
6
5
2
3
4
A2  
VSS  
• 16-byte page write buffer  
• ESD protection > 4,000V  
• More than 1 million erase/write cycles  
• Data retention > 200 years  
Block Diagram  
• Factory programming available  
A0 A1 A2  
HV Generator  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN and MSOP  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
• Pb-free and RoHS compliant  
Temperature ranges:  
EEPROM  
Array  
XDEC  
- Industrial (I):  
-40°C to +85°C  
- Automotive (E): -40°C to +125°C  
SDA  
SCL  
Description:  
VCC  
VSS  
YDEC  
The Microchip Technology Inc. 24C01C is a 1K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 128 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
typical standby and active currents of only 10 μA and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes. Func-  
tional address lines allow the connection of up to eight  
24C01C devices on the same bus for up to 8K bits of  
contiguous EEPROM memory. The device is available  
in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), 8-  
pin 2x3 DFN, 8-pin MSOP and TSSOP packages.  
Sense Amp.  
R/W Control  
Pin Function Table  
Name  
Function  
VSS  
Ground  
SDA  
Serial Data  
Serial Clock  
SCL  
VCC  
+4.5V to 5.5V Power Supply  
Chip Selects  
A0, A1, A2  
Test  
Test Pin: may be tied high, low or  
left floating  
2
I C is a trademark of Philips Corporation.  
© 2007 Microchip Technology Inc.  
DS21201G-page 1  

24C01CT-I/SN 替代型号

型号 品牌 替代类型 描述 数据表
24C01C-I/SN MICROCHIP

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