是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | DIP, DIP8,.3 | Reach Compliance Code: | compliant |
Factory Lead Time: | 16 weeks | 风险等级: | 5.5 |
最长访问时间: | 32 ns | 最大时钟频率 (fCLK): | 16 MHz |
I/O 类型: | COMMON/SEPARATE | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.271 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
可输出: | NO | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT APPLICABLE |
电源: | 3/5 V | 认证状态: | Not Qualified |
反向引出线: | NO | 座面最大高度: | 5.334 mm |
最大待机电流: | 0.000012 A | 最小待机电流: | 2.5 V |
子类别: | SRAMs | 最大压摆率: | 0.01 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 2.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
23LC1024-E/SN | MICROCHIP |
获取价格 |
IC,SRAM,128KX8,CMOS,SOP,8PIN,PLASTIC | |
23LC1024-E/ST | MICROCHIP |
获取价格 |
128K X 8 STANDARD SRAM, PDSO8, 4.40 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSSOP-8 | |
23LC1024-E/ST/P | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024-I | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024-I/P | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024-I/SN | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024-I/SNVAO | MICROCHIP |
获取价格 |
Standard SRAM, 128KX8, 25ns, CMOS, PDSO8 | |
23LC1024-I/ST/P | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024T-E/SN | MICROCHIP |
获取价格 |
1Mbit SPI Serial SRAM with SDI and SQI Interface | |
23LC1024T-E/SNVAO | MICROCHIP |
获取价格 |
Standard SRAM, 128KX8, CMOS, PDSO8 |