是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TSSOP, TSSOP8,.25 | Reach Compliance Code: | compliant |
Factory Lead Time: | 9 weeks | 风险等级: | 1.2 |
最大时钟频率 (fCLK): | 20 MHz | I/O 类型: | SEPARATE |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
长度: | 4.4 mm | 内存密度: | 524288 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端口数量: | 1, (3 LINE) | 端子数量: | 8 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64KX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 3/5 V |
认证状态: | Not Qualified | 筛选级别: | TS 16949 |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.000004 A |
最小待机电流: | 2.5 V | 子类别: | SRAMs |
最大压摆率: | 0.01 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
23LC512T-E/P | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LC512T-E/SN | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LC512T-E/ST | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LC512T-I/P | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LC512T-I/SN | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LC512T-I/ST | MICROCHIP |
获取价格 |
512Kbit SPI Serial SRAM with SDI and SQI Interface | |
23LCV1024 | MICROCHIP |
获取价格 |
1 Mbit SPI Serial SRAM with Battery Backup and SDI Interface | |
23LCV1024-I/SN | MICROCHIP |
获取价格 |
STANDARD SRAM | |
23LCV1024-IP | MICROCHIP |
获取价格 |
1 Mbit SPI Serial SRAM with Battery Backup and SDI Interface | |
23LCV1024-ISN | MICROCHIP |
获取价格 |
1 Mbit SPI Serial SRAM with Battery Backup and SDI Interface |