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23LC1024T-I/ST PDF预览

23LC1024T-I/ST

更新时间: 2024-11-16 08:28:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP 时钟静态存储器光电二极管内存集成电路
页数 文件大小 规格书
32页 414K
描述
STANDARD SRAM

23LC1024T-I/ST 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP, TSSOP8,.25Reach Compliance Code:compliant
风险等级:1.12最长访问时间:25 ns
最大时钟频率 (fCLK):20 MHzI/O 类型:COMMON/SEPARATE
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
可输出:NO封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
反向引出线:NO座面最大高度:1.2 mm
最大待机电流:0.000012 A最小待机电流:2.5 V
子类别:SRAMs最大压摆率:0.01 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mmBase Number Matches:1

23LC1024T-I/ST 数据手册

 浏览型号23LC1024T-I/ST的Datasheet PDF文件第2页浏览型号23LC1024T-I/ST的Datasheet PDF文件第3页浏览型号23LC1024T-I/ST的Datasheet PDF文件第4页浏览型号23LC1024T-I/ST的Datasheet PDF文件第5页浏览型号23LC1024T-I/ST的Datasheet PDF文件第6页浏览型号23LC1024T-I/ST的Datasheet PDF文件第7页 
23A1024/23LC1024  
1Mbit SPI Serial SRAM with SDI and SQI Interface  
Device Selection Table  
Part  
Number  
Temp.  
Ranges  
Dual I/O  
(SDI)  
Quad I/O  
(SQI)  
Max. Clock  
Frequency  
VCC Range  
Packages  
23A1024  
23LC1024  
1.7-2.2V  
2.5-5.5V  
I, E  
I, E  
Yes  
Yes  
Yes  
Yes  
20 MHz(1)  
20 MHz(1)  
SN, ST, P  
SN, ST, P  
Note 1: 16 MHz for E-temp.  
Features  
Description  
• SPI Bus Interface:  
- SPI compatible  
The Microchip Technology Inc. 23A1024/23LC1024  
are 1 Mbit Serial SRAM devices. The memory is  
accessed via a simple Serial Peripheral Interface (SPI)  
compatible serial bus. The bus signals required are a  
clock input (SCK), a data in line (SI) and a data out line  
(SO). Access to the device is controlled through a Chip  
Select (CS) input. Additionally, SDI (Serial Dual  
Interface) and SQI (Serial Quad Interface) is supported  
if your application needs faster data rates.  
- SDI (dual) and SQI (quad) compatible  
- 20 MHz Clock rate for all modes  
• Low-Power CMOS Technology:  
- Read Current: 3 mA at 5.5V, 20 MHz  
- Standby Current: 4 A at +85°C  
• Unlimited Read and Write Cycles  
• Zero Write Time  
This device also supports unlimited reads and writes to  
the memory array.  
• 128K x 8-bit Organization:  
- 32-byte page  
The 23A1024/23LC1024 is available in standard  
packages including 8-lead SOIC, PDIP and advanced  
8-lead TSSOP.  
• Byte, Page and Sequential Mode for Reads and  
Writes  
• High Reliability  
Package Types (not to scale)  
Temperature Ranges Supported:  
- Industrial (I):  
- Automotive (E):  
-40C to +85C  
-40C to +125C  
• RoHS Compliant  
SOIC/TSSOP/PDIP  
• 8 Lead SOIC, TSSOP and PDIP Packages  
CS  
1
8
VCC  
SO/SIO1  
SIO2  
2
3
7
6
HOLD/SIO3  
SCK  
Pin Function Table  
Name  
Function  
VSS  
4
5
SI/SIO0  
CS  
Chip Select Input Pin  
Serial Output/SDI/SQI Pin  
SQI Pin  
SO/SIO1  
SIO2  
VSS  
Ground Pin  
SI/SIO0  
SCK  
Serial Input/SDI/SQI Pin  
Serial Clock Pin  
HOLD/SIO3 Hold/SQI Pin  
VCC  
Power Supply Pin  
2012-2015 Microchip Technology Inc.  
DS20005142C-page 1  

23LC1024T-I/ST 替代型号

型号 品牌 替代类型 描述 数据表
23LC1024-I/SN MICROCHIP

完全替代

1Mbit SPI Serial SRAM with SDI and SQI Interface

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