21DQ10TR

更新时间： 2024-09-19 13:03:51

品牌	Logo	应用领域
NIEC		整流二极管
页数	文件大小	规格书
2页	28K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.2A, 100V V(RRM), Silicon, MINIATURE PACKAGE-2

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中文翻译

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数据手册

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21DQ10TR 数据手册

SBD Type : 21DQ10

OUTLINE DRAWING

FEATURES

* Miniature Size

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 30volts trough 100volts Types Available

* 52mm Inside Tape Spacing Package Available

Maximum Ratings

Approx Net Weight:0.38g

Symbol

V_RRM

21DQ10

100

Unit

Rating

Repetitive Peak Reverse Voltage

Without Fin or

1.3 Ta=28°C

Average Rectified

Output Current

P.C.Board

Mounted *

I_O

Half Sine Wave Resistive Load

1.7 Ta=43°C

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

I_F(RMS)

I_FSM

Tjw

2.67

°C

70 Half Sine Wave,1cycle,Non-repetitive

- 40 to + 150

Tstg

- 40 to + 150

Electrical • Thermal Characteristics

Symbol

Conditions

Min Typ Max

Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 2 A

Without Fin or P.C.Board

P.C.Board mounted *

0.85

105

Thermal Resistance(Junction to Ambient) Rth(j-a)

* :Print Lands = 5x5 mm,Both Sides

°C/W

中文翻译

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