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20UT04FNTRL PDF预览

20UT04FNTRL

更新时间: 2024-10-28 07:32:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 154K
描述
High Performance Schottky Generation 5.0, 20 A

20UT04FNTRL 数据手册

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VS-20UT04, VS-20WT04FN  
Vishay Semiconductors  
High Performance Schottky Generation 5.0, 20 A  
FEATURES  
• 175 °C high performance Schottky diode  
• Very low forward voltage drop  
• Extremely low reverse leakage  
• Optimized VF vs. IR trade off for high efficiency  
• Increased ruggedness for reverse avalanche capability  
• RBSOA available  
I-PAK(TO-251AA)  
D-PAK(TO-252AA)  
Base  
cathode  
4, 2  
Base  
cathode  
4, 2  
• Negligible switching losses  
3
3
1
1
Anode  
Anode  
Anode  
Anode  
• Submicron trench technology  
VS-20UT04  
VS-20WT04FN  
• Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
PRODUCT SUMMARY  
D-PAK (TO-252AA),  
I-PAK (TO-251AA)  
• Specific for PV cells bypass diode  
• High efficiency SMPS  
• High frequency switching  
• Output rectification  
Package  
IF(AV)  
VR  
20 A  
45 V  
VF at IF  
0.53 V  
• Reverse battery protection  
• Freewheeling  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
108 mJ  
• DC/DC systems  
• Increased power density systems  
Note  
VF measured at 125 °C, connecting 2 anode pins  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
UNITS  
VRRM  
45  
V
20 Apk, TJ = 125 °C  
(typical, measured connecting 2 anode pins)  
VF  
TJ  
0.480  
V
Range  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-20UT04  
VS-20WT04FN  
SYMBOL  
TEST CONDITIONS  
UNITS  
Maximum DC reverse voltage  
VR  
TJ = 25 °C  
45  
V
Document Number: 94573  
Revision: 04-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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