Datasheet > 20UT04FNTRL

20UT04FNTRL

更新时间： 2022-09-15 00:28:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	154K
描述
High Performance Schottky Generation 5.0, 20 A

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20UT04FNTRL 数据手册

VS-20UT04, VS-20WT04FN

High Performance Schottky

Vishay Semiconductors

Generation 5.0, 20 A

180

180°

120°

90°

60°

30°

170

160

150

140

130

120

RMS limit

Square wave (D = 0.50)

80 % rated V_Rapplied

See note (1)

I_F(AV)- Average Forward Current (A)

94573_06

94573_05

I_F(AV)- Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

1000

100

1000

10 000

94573_07

t_p- Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current

Note

(1)

Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

;

Pd = Forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6);

Pd_REV= Inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= 80 % rated V_R

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 94573

Revision: 04-Jan-11

1 2 345 6 7...9

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