VS-20UT04, VS-20WT04FN
High Performance Schottky
Generation 5.0, 20 A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 153 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
20
A
Following any rated load
condition and with rated
V
5 μs sine or 3 μs rect. pulse
900
Maximum peak one cycle
non-repetitive surge current
IFSM
A
RRM applied (1)
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 7 A, L = 4.4 mH
220
108
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
IAS at
TJ max.
Note
(1)
Measured connecting 2 anode pins
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.505
0.570
0.415
0.520
-
MAX. UNITS
10 A
0.540
TJ = 25 °C
20 A
0.610
V
(1)(2)
Forward voltage drop
VFM
10 A
0450
TJ = 125 °C
20 A
0.580
TJ = 25 °C
100
μA
mA
pF
(1)
Reverse leakage current
IRM
CT
VR = Rated VR
TJ = 125 °C
-
7
Junction capacitance
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
1900
-
-
-
Series inductance
LS
nH
Maximum voltage rate of change
dV/dt
-
10 000
V/μs
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
Only 1 anode pin connected
(2)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case
RthJC
RthCS
DC operation
1.2
0.3
°C/W
Typical thermal resistance,
case to heatsink
2
g
Approximate weight
Marking device
0.07
oz.
Case style I-PAK
Case style D-PAK
20UT04
20WT04FN
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94573
Revision: 04-Jan-11