Datasheet > 1SV280,H3F(B

1SV280,H3F(B

更新时间： 2024-11-12 14:39:11

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	161K
描述
Variable Capacitance Diode

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中文翻译

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技术参数
数据手册

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1SV280,H3F(B 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.67	二极管类型：	VARIABLE CAPACITANCE DIODE
Base Number Matches：	1

1SV280,H3F(B 数据手册

1SV280

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV280

VCO for UHF Band Radio

Unit: mm

•

High capacitance ratio: C / C

= 2.4 (typ.)

10V

Low series resistance: r = 0.44 Ω (typ.)

Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 15 V

⎯

= 2 V, f = 1 MHz

= 10 V, f = 1 MHz

⎯

3.8

1.5

2.0

⎯

4.7

2.0

⎯

Capacitance

⎯

10V

/ C

Capacitance ratio

Series resistance

2.4

0.44

10V

= 1 V, f = 470 MHz

0.6

Marking

Start of commercial production

1994-07

2014-03-01

12 3

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