Datasheet > 1SV284_07

1SV284_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		无线
页数	文件大小	规格书
3页	248K
描述
VCO for V/UHF Band Radio

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1SV284_07 数据手册

1SV284

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV284

VCO for V/UHF Band Radio

Unit: mm

•

High capacitance ratio: C /C

= 2.0 (typ.)

1 V 4 V

Low series resistance: r = 0.22 Ω (typ.)

Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 10 V

⎯

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

7.0

1.8

⎯

8.5

⎯

1 V

4 V

Capacitance

8.0

2.0

0.22

Capacitance ratio

Series resistance

1 V 4 V

⎯

= 1 V, f = 470 MHz

0.4

Marking

2007-11-01

12 3

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