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1SR35-200 PDF预览

1SR35-200

更新时间: 2024-09-20 02:55:07
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 32K
描述
SILICON RECTIFIER DIODES

1SR35-200 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1SR35-200 数据手册

 浏览型号1SR35-200的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
DO - 41  
1SR35-100 ~ 1SR35-400  
PRV : 100 - 400 Volts  
Io : 1.0 Ampere  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
0.205 (5.2)  
0.166 (4.2)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.339 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL 1SR35-100  
1SR34-200  
200  
1SR34-400  
400  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
V
V
V
140  
280  
Maximum DC Blocking Voltage  
100  
200  
400  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 50 °C  
Maximum Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IF(AV)  
1.0  
30  
A
IFSM  
A
Maximum Forward Voltage at IF = 1.0 A  
Maximum DC Reverse Current at VR = VRRM  
Junction Temperature Range  
VF  
IRM  
1.1  
V
10  
mA  
°C  
°C  
TJ  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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