Datasheet > 1PS59SB21

1PS59SB21

更新时间： 2024-09-21 06:22:07

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	36K
描述
Schottky barrier diode

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中文翻译

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数据手册

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1PS59SB21 数据手册

SMD Type

Diodes

Schottky barrier diode

1PS59SB21

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Ultra fast switching speed

Low forward voltage

Guard ring protoected

Small SMD package.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Non-repetitive peak forwrad current

Storage temperature

Symbol

V^R

Min

-65

Max

Unit

I^F

200

I^FSM

T^stg

+150

125

Junction temperature

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

I^F= 10 mA

Min

Max

300

420

550

Unit

forward voltage

reverse current

V^F

I^F= 100 mA

I^F= 200 mA

V^R= 35 V

V^R= 35 V, Tj = 100 ,note 1

f = 1 MHz; VR = 0 V

diode capacitance

C^d

thermal resistance from junction to ambient

Note

R^{th j-a}

500

K/W

1. Pulse test: tp = 300 s; ä = 0.02.

Marking

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