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1P1G126QDRYRQ1 PDF预览

1P1G126QDRYRQ1

更新时间： 2024-11-26 02:58:31
品牌 Logo 应用领域
德州仪器 - TI 栅驱动光电二极管逻辑集成电路
页数 文件大小 规格书
12页 718K
描述
SN74LVC1G126-Q1 Single Bus Buffer Gate With 3-State Output

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1P1G126QDRYRQ1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SON-6
Reach Compliance Code：compliantFactory Lead Time：6 weeks
风险等级：1.7系列：LVC/LCX/Z
JESD-30 代码：R-PDSO-N6JESD-609代码：e4
逻辑集成电路类型：BUS DRIVER最大I（ol）：0.032 A
湿度敏感等级：1位数：1
功能数量：1端口数量：2
端子数量：6最高工作温度：125 °C
最低工作温度：-40 °C输出特性：3-STATE
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：SON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE传播延迟（tpd）：9 ns
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：1.65 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子位置：DUALBase Number Matches：1

1P1G126QDRYRQ1 数据手册

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SN74LVC1G126-Q1  
www.ti.com............................................................................................................................................................. SCES467B–JULY 2003–REVISED APRIL 2008  
SINGLE BUS BUFFER GATE  
WITH 3-STATE OUTPUT  
1
FEATURES  
•
Qualified for Automotive Applications  
DBV PACKAGE  
(TOP VIEW)  
•
ESD Protection Exceeds 2000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
1
2
3
5
4
OE  
A
VCC  
Y
•
•
•
•
•
Supports 5-V VCC Operation  
GND  
Inputs Accept Voltages to 5.5 V  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
Ioff Supports Partial-Power-Down Mode  
Operation  
•
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
DESCRIPTION/ORDERING INFORMATION  
This single bus buffer gate is designed for 1.65-V to 5.5-V VCC operation.  
The SN74LVC1G126-Q1 is a single line driver with a 3-state output. The output is disabled when the  
output-enable (OE) input is low.  
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a  
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING(3)  
C26_  
–40°C to 125°C  
SOT (SOT-23) – DBV Reel of 3000  
1P1G126QDBVRQ1  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(3) DBV: The actual top-side marking has one additional character that designates the wafer fab/assembly site.  
FUNCTION TABLE  
INPUTS  
OUTPUT  
Y
OE  
H
A
H
L
H
L
H
L
X
Z
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2008, Texas Instruments Incorporated  
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