Datasheet > 1N946TR

1N946TR

更新时间： 2024-11-29 20:58:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	176K
描述
Zener Diode, 11.7V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N946TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-7	包装说明：	HERMETIC SEALED, GLASS, DO-7
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.78	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-204AA
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
湿度敏感等级：	1	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大功率耗散：	0.5 W
认证状态：	Not Qualified	标称参考电压：	11.7 V
表面贴装：	NO	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
电压温度Coeff-Max：	0.0234 mV/ °C	最大电压容差：	5%
Base Number Matches：	1

1N946TR 数据手册

1N941 thru 1N946B-1

11.7 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N941 thru 1N946B series of Zero-TC Reference Diodes

provides a selection of 11.7 V nominal voltages and temperature

coefficients to as low as 0.0002%/^oC for minimal voltage change with

temperature when operated at 7.5 mA. These glass axial-leaded DO-7

reference diodes are also available in JAN, JANTX, and JANTXV military

qualifications. Microsemi also offers numerous other Zener Reference

Diode products for a variety of other voltages from 6.2 V to 200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N941 thru 1N946B series

•

Provides minimal voltage changes over a broad

temperature range

Standard reference voltage of 11.7 V +/- 5% with

tighter tolerances also available

For instrumentation and other circuit designs

requiring a stable voltage reference

•

1N941B, 942B, 943B, 944B, 945B also have military

qualification to MIL-PRF-19500/157 up to the

JANTXV level by adding JAN, JANTX, or JANTXV

prefixes to part numbers as well as “-1” suffix, e.g.

JANTX1N944B-1, etc.

Internal metallurgical bonds

JANS Equivalent available via SCD

Radiation Hardened devices available by changing

“1N” prefix to “RH”, e.g. RH944B, RH945B, etc.

Also consult factory for “RH” data sheet brochure

Maximum temperature coefficient selections

available from 0.01%/ºC to 0.0002%/ºC

Tight reference voltage tolerances available at 11.7

V nominal values by adding the tolerance 1%, 2%,

3%, etc. after the part number for further

identification e.g. 1N944B-2%, 1N945A-1%,

1N944B-1-1%, etc.

Flexible axial-lead mounting terminals

Nonsensitive to ESD per MIL-STD-750 Method 1020

•

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & StorageTemperature: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case with DO-7

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 39 mA. NOTE: For optimum

voltage-temperature stability, I_Z= 7.5 mA (less than

95 mW in dissipated power)

(DO-204AA) package

TERMINALS: Tin-lead plated and solderable per

MIL-STD-750, Method 2026

MARKING: Part number and cathode band

POLARITY: Reference diode to be operated with

the banded end positive with respect to the

opposite end

•

Solder temperatures: 260 ^oC for 10 s (maximum)

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.2 grams.

See package dimensions on last page

Microsemi

Page 1

8-21-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N946TR相关器件

型号	品牌	获取价格	描述	数据表
1N948	ETC	获取价格	silicon diode
1N949	MICROSEMI	获取价格	Optimized for Radio Frequency Response
1N949	NJSEMI	获取价格	GERMANIUM DIODES
1N949R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 50V V(RRM), Germanium,
1N949X	MICROSEMI	获取价格	暂无描述
1N95	NJSEMI	获取价格	Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
1N950	NJSEMI	获取价格	DIODE
1N950A	AEROFLEX	获取价格	35pF, 150V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N950ACO	AEROFLEX	获取价格	Variable Capacitance Diode, 35pF C(T), 150V, Silicon, DIE-1
1N950B	AEROFLEX	获取价格	35pF, 150V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

与1N946TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

51
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

1N946TR

1N946TR 技术参数

1N946TR 数据手册

与1N946TR相关器件

与1N946TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N946TR

1N946TR 技术参数

1N946TR 数据手册

与1N946TR相关器件

与1N946TR相关文章

您还可以找

您在本页遇到什么问题？