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1N949X

更新时间: 2024-11-29 13:03:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管无线
页数 文件大小 规格书
1页 67K
描述
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1N949X 数据手册

  
Gold Bonded  
1N949 Germanium Diodes  
Optimized for Radio Frequency Response  
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.  
Applications  
AM/FM detectors  
DO-7 Glass Package  
Ratio detectors  
0.018-0.022"  
FM discriminators  
0.458-.558 mm  
TV audio detectors  
RF input probes  
1.0"  
25.4 mm  
(Min.)  
Length  
0.230-0.30"  
TV video detectors  
Dia  
0.085-.107 "  
2.16-2.71 mm  
5.85-7.62mm  
Features  
Lower leakage current  
Flat junction capacitance  
High mechanical strength  
At least 1 million hours MTBF  
BKC's Sigma-Bond™ plating for  
problem free solderability  
O
Absolute Maximum Ratings at Tamb = 25 C unless otherwise specified  
Parameter  
Peak Inverse Voltage  
Peak Forward Surge Current Non-Repetitive, t = 1 Second  
Peak Forward Surge Current Repetitive  
Average Rectified Forward Current  
Symbols  
PIV  
Min.  
--  
Max.  
50  
0.5  
250  
70  
Units  
Volts  
Amps  
mA  
IFSM  
IFSR  
IO  
mA  
Operating Temperatures  
TJ & Op  
-78  
-78  
+90  
OC  
OC  
Storage Temperatures  
TJ & STG  
+100  
Electrical Characteristics at Tamb = 25 OC  
Parameter  
TestConditions  
Symbols  
Min.  
Typ.  
Max.  
Units  
Forward Voltage Drop  
IF = 10mA  
VF  
0.39  
Volts  
Reverse Leakage  
Breakdown Voltage  
VR = 10 Volts  
IR = 1.0mA  
IR  
10  
µA  
PIV  
50  
Volts  
6 Lake Street - Lawrence, MA 01841  
Tel: 978-681-0392 - Fax: 978-681-9135  

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