1N6485

更新时间： 2024-11-02 12:50:03

品牌	Logo	应用领域
EIC		稳压二极管齐纳二极管测试
页数	文件大小	规格书
2页	108K
描述
SILICON ZENER DIODES

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中文翻译

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技术参数
数据手册

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1N6485 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.66
Is Samacsys：	N	Base Number Matches：	1

1N6485 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

SILICON ZENER DIODES

1N4460 - 1N4496 and

1N6485 - 1N6491

M1A

VZ : 3.3 - 200 Volts

P^D: 1.5 Watts

1.00 (25.4)

FEATURES :

0.085(2.16)

MIN.

* Silicon power zener diodes

* Complete Voltage Range 3.3 to 200 Volts

* High peak reverse power dissipation

* High reliability

0.075(1.91)

0.138(3.51)

0.122(3.10)

* Low leakage current

* Pb / RoHS Free

1.00 (25.4)

0.024(0.60)

MIN.

0.022(0.55)

MECHANICAL DATA :

* Case : M1A Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.20 gram (approximately)

MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified)

Rating

Symbol

P_D

Value

1.5

Unit

Power Dissipation at Ta = 25 °C

Maximum Forward Voltage at I_F= 200 mA

Thermal Resistance , Junction to Lead (Note 1)

Operating Temperature

V_F

1.0

R_ӨJA

T_J

°C/W

°C

- 65 to + 175

T_STG

Storage Temperature Range

°C

Note : (1) At 3/8"(10 mm) lead length form body.

Fig. 1 POWER TEMPERATURE DERATING CURVE

1.5

1.2

0.9

0.6

0.3

L = 3/8" (10 mm)

100

125

150

175

Ta, AMBIENT TEMPERATURE (°C)

Page 1 of 2

Rev. 03 : November 2, 2006

中文翻译

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