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1N6486 PDF预览

1N6486

更新时间: 2024-11-06 12:50:03
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
2页 108K
描述
SILICON ZENER DIODES

1N6486 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.67
Is Samacsys:NBase Number Matches:1

1N6486 数据手册

 浏览型号1N6486的Datasheet PDF文件第2页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
SILICON ZENER DIODES  
1N4460 - 1N4496 and  
1N6485 - 1N6491  
M1A  
VZ : 3.3 - 200 Volts  
PD : 1.5 Watts  
1.00 (25.4)  
FEATURES :  
0.085(2.16)  
MIN.  
* Silicon power zener diodes  
* Complete Voltage Range 3.3 to 200 Volts  
* High peak reverse power dissipation  
* High reliability  
0.075(1.91)  
0.138(3.51)  
0.122(3.10)  
* Low leakage current  
* Pb / RoHS Free  
1.00 (25.4)  
0.024(0.60)  
MIN.  
0.022(0.55)  
MECHANICAL DATA :  
* Case : M1A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.20 gram (approximately)  
MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified)  
Rating  
Symbol  
PD  
Value  
1.5  
Unit  
W
Power Dissipation at Ta = 25 °C  
Maximum Forward Voltage at IF = 200 mA  
Thermal Resistance , Junction to Lead (Note 1)  
Operating Temperature  
VF  
1.0  
V
RӨJA  
TJ  
42  
°C/W  
°C  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
°C  
Note : (1) At 3/8"(10 mm) lead length form body.  
Fig. 1 POWER TEMPERATURE DERATING CURVE  
1.5  
1.2  
0.9  
0.6  
0.3  
0
L = 3/8" (10 mm)  
0
25  
50  
75  
100  
125  
150  
175  
Ta, AMBIENT TEMPERATURE (°C)  
Page 1 of 2  
Rev. 03 : November 2, 2006  

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