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1N6480-E3/96 PDF预览

1N6480-E3/96

更新时间： 2024-11-14 15:25:15
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 73K
描述
Diode Switching 200V 1A 2-Pin DO-213AB T/R

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1N6480-E3/96 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-213AB包装说明：O-PELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.24其他特性：FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1 VJEDEC-95代码：DO-213AB
JESD-30 代码：O-PELF-R2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：30 A
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：200 V子类别：Rectifier Diodes
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6480-E3/96 数据手册

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1N6478, 1N6479, 1N6480, 1N6481, 1N6482, 1N6483, 1N6484  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Ideal for automated placement  
SUPERECTIFIER®  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
• AEC-Q101 qualified  
DO-213AB  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: DO-213AB, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade Base  
P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
IR  
30 A  
10 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF  
1.1 V  
TJ max.  
Package  
Diode variations  
175 °C  
meets JESD 201 class 2 whisker test  
Polarity: Two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
DO-213AB  
Single die  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 UNIT  
STANDARD RECOVERY DEVICE:  
1ST BAND IS WHITE  
Polarity color bands (2nd band)  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
Gray  
50  
Red  
100  
70  
Orange Yellow  
Green  
600  
Blue  
800  
560  
800  
Violet  
1000  
700  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
1.0  
V
V
V
A
35  
420  
Max. DC blocking voltage  
50  
100  
600  
1000  
Max. average forward rectified current  
IF(AV)  
Peak forward surge current 8.3 ms single half  
IFSM  
IR(AV)  
30  
100  
A
sine-wave superimposed on rated load  
Max. full load reverse current, full cycle average at  
TA = 75 °C  
μA  
°C  
Operating junction and storage temperature  
range  
TJ, TSTG  
- 65 to + 175  
Revision: 11-Dec-13  
Document Number: 88527  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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与1N6480-E3/96相关器件

型号 品牌 获取价格 描述 数据表
1N6480-E3/97 VISHAY

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 		STD RECOVERY RECTFR 200V 1A 2PIN DO-213AB - Tape and Reel
1N6480-HE3/96 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
1N6480HE3/97 VISHAY

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 		STD RECOVERY RECTFR 200V 1A 2PIN DO-213AB - Tape and Reel
1N6480-HE3/97 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
1N6481 VISHAY

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 		SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
1N648-1 MICROSEMI

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 		Silicon Switching Diode DO-35 Glass Package
1N6481/25 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, PLASTIC PACKAGE-2
1N648-1E3 MICROSEMI

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 		Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
1N6481-E3 VISHAY

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 		DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Di
1N6481-E3/96 VISHAY

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 		Diode Switching 400V 1A 2-Pin DO-213AB T/R

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