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1N6468E3

更新时间： 2024-01-29 19:35:44
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 508K
描述
Trans Voltage Suppressor Diode, 500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon,

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1N6468E3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-LALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.38其他特性：HIGH RELIABILITY
最小击穿电压：54 V击穿电压标称值：54 V
外壳连接：ISOLATED最大钳位电压：78.5 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：2.5 W
参考标准：IEC-61000-4-2, 4-4, 4-5最大重复峰值反向电压：51.6 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：PURE MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6468E3 数据手册

 浏览型号1N6468E3的Datasheet PDF文件第2页浏览型号1N6468E3的Datasheet PDF文件第3页浏览型号1N6468E3的Datasheet PDF文件第4页浏览型号1N6468E3的Datasheet PDF文件第5页浏览型号1N6468E3的Datasheet PDF文件第6页 
1N6461 – 1N6468  
Qualified Levels:  
JAN, JANTX, and  
JANTXV  
Voidless Hermetically Sealed Unidirectional  
Available on  
commercial  
versions  
Transient Voltage Suppressors  
Qualified per MIL-PRF-19500/551  
DESCRIPTION  
This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors  
(TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications  
where a failure cannot be tolerated. Working peak “standoff” voltages are available from 5.0 to  
51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical  
bonds. These devices are also available in a surface mount MELF package configuration.  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
•
•
•
•
•
•
•
•
Popular JEDEC registered 1N6461 thru 1N6468 series.  
Available as 500 W peak pulse power (PPP).  
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 V.  
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.  
Triple-layer passivation.  
“B” Package  
Internal “Category 1” metallurgical bonds.  
Voidless hermetically sealed glass package.  
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in  
reference to MIL-PRF-19500 is also available.  
Also available in:  
(See part nomenclature for all available options.)  
“B” SQ-MELF  
Package  
(surface mount)  
•
RoHS compliant versions available (commercial grade only).  
APPLICATIONS / BENEFITS  
1N6461US - 1N6468US  
•
•
•
•
•
•
•
Military and other high-reliability transient protection.  
Extremely robust construction.  
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.  
Protection from secondary effects of lightning per select levels in IEC61000-4-5.  
Flexible axial-leaded mounting terminals.  
Nonsensitive to ESD per MIL-STD-750 method 1020.  
Inherently radiation hard as described in Microsemi “MicroNote 050”.  
MAXIMUM RATINGS @ 25 ºC  
MSC – Lawrence  
6 Lake Street,  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Parameters/Test Conditions  
Symbol  
TJ and TSTG  
RӨJL  
Value  
-55 to +175  
60  
Unit  
oC  
Junction and Storage Temperature  
Thermal Resistance, Junction to Lead (1)  
Forward Surge Current @ 8.3 ms half-sine  
Forward Voltage @ 1 Amp  
ºC/W  
A
IFSM  
80  
Fax: (978) 689-0803  
VF  
1.5  
V
MSC – Ireland  
PPP  
500  
W
Peak Pulse Power @ 10/1000 µs  
Reverse Power Dissipation (2)  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
PR  
2.5  
W
oC  
Solder Temperature @ 10 s  
260  
Notes: 1. At L = 0.375 inch (9.53 mm) from body.  
2. Derate at 16.7 mW/oC (see figure 4).  
Website:  
www.microsemi.com  
T4-LDS-0286, Rev. 1 (4/22/13)  
©2013 Microsemi Corporation  
Page 1 of 6  
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