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1N6373-E3/4H PDF预览

1N6373-E3/4H

更新时间： 2024-11-24 14:27:15
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 98K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

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1N6373-E3/4H 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.67Is Samacsys：N
其他特性：EXCELLENT CLAMPING CAPABILITY最小击穿电压：6 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT APPLICABLE极性：UNIDIRECTIONAL
最大功率耗散：6.5 W认证状态：Not Qualified
最大重复峰值反向电压：5 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

1N6373-E3/4H 数据手册

 浏览型号1N6373-E3/4H的Datasheet PDF文件第2页浏览型号1N6373-E3/4H的Datasheet PDF文件第3页浏览型号1N6373-E3/4H的Datasheet PDF文件第4页浏览型号1N6373-E3/4H的Datasheet PDF文件第5页 
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available inuni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
Case Style 1.5KE  
• Low incremental surge resistance  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
VWM  
PPPM  
PD  
5.0 V to 18 V  
1500 W  
6.5 W  
IFSM  
200 A  
TJ max.  
175 °C  
MECHANICAL DATA  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use C suffix (e.g. ICTE-18C).  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
Document Number: 88356  
Revision: 12-Feb-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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