Datasheet > 1N6373HE3_A/D

1N6373HE3_A/D

更新时间： 2024-11-24 22:57:07

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	90K
描述
TVS DIODE 5V 7.5V 1.5KE

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

1N6373HE3_A/D 数据手册

End of Life "August 2021" - Alternative Device: "1.5KE Series"

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com

Vishay General Semiconductor

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

Case Style 1.5KE

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

5.0 V to 18 V

6.0 V to 21.2 V

9.2 V to 21.2 V

1500 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

_BR(uni-directional)

_BR(bi-directional)

P_PPM

P_D

6.5 W

MECHANICAL DATA

I_FSM

200 A

Case: 1.5KE, molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant and commercial grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

T_Jmax.

Polarity

Package

175 °C

Uni-directional, bi-directional

1.5KE

DEVICES FOR BI-DIRECTION APPLICATIONS

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

For bi-directional types, use C suffix (e.g. ICTE18C).

Electrical characteristics apply in both directions.

Polarity: for uni-directional types the color band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾(fig. 3)

Power dissipation on infinite heatsink at T_L= 75 °C (fig. 8)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 100 A for uni-directional only

Operating junction and storage temperature range

See next table

6.5

P_D

I_FSM

200

V_F

3.5

T_J, T_STG

-55 to +175

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum

(2)

Revision: 01-Mar-2021

Document Number: 88356

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

1N6373HE3_A/D 替代型号

型号	品牌	替代类型	描述	数据表
ICTE5.0-E3/54	VISHAY	完全替代	TVS DIODE 5V 7.5V 1.5KE
1N6373-E3/73	VISHAY	完全替代	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373-E3/54	VISHAY	完全替代	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 P

与1N6373HE3_A/D相关器件

型号	品牌	获取价格	描述	数据表
1N6373MPTE-5	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon
1N6373MPTE-5C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Bidirectional, 1 Element, Silicon
1N6373RL4	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6373RL4	MOTOROLA	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-02, 2 PIN
1N6373RL4G	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6373TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6374	NJSEMI	获取价格	1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO
1N6374	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1N6374	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
1N6374	ONSEMI	获取价格	1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

与1N6373HE3_A/D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373HE3_A/D

1N6373HE3_A/D 数据手册

1N6373HE3_A/D 替代型号

与1N6373HE3_A/D相关器件

与1N6373HE3_A/D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373HE3_A/D

1N6373HE3_A/D 数据手册

1N6373HE3_A/D 替代型号

与1N6373HE3_A/D相关器件

与1N6373HE3_A/D相关文章

您还可以找

您在本页遇到什么问题？