Datasheet > 1N6373RL4

1N6373RL4

更新时间： 2024-11-24 20:32:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		局域网二极管电视
页数	文件大小	规格书
6页	56K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-02, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N6373RL4 技术参数

生命周期：	Transferred	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.34	Is Samacsys：	N
其他特性：	LOW IMPEDANCE, UL RECOGNIZED, HIGH RELIABILITY	最小击穿电压：	6 V
外壳连接：	ISOLATED	最大钳位电压：	9.4 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	5 V	最大反向电流：	300 µA
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N6373RL4 数据手册

MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

1N6373A

SERIES

1500 WATT

1500 Watt MOSORB

GENERAL DATA APPLICABLE TO ALL SERIES IN

THIS GROUP

PEAK POWER

Zener Transient Voltage Suppressors

Unidirectional and Bidirectional

MOSORB

ZENER OVERVOLTAGE

TRANSIENT

SUPPRESSORS

6.2–250 VOLTS

1500 WATT PEAK POWER

5 WATTS STEADY STATE

Mosorb devices are designed to protect voltage sensitive components from high volt-

age, high energy transients. They have excellent clamping capability, high surge capabili-

ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,

cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use

in communication systems, numerical controls, process controls, medical equipment,

business machines, power supplies and many other industrial/consumer applications, to

protect CMOS, MOS and Bipolar integrated circuits.

Specification Features:

• Standard Voltage Range — 6.2 to 250 V

• Peak Power — 1500 Watts @ 1 ms

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 µA Above 10 V

• UL Recognition

• Response Time is Typically < 1 ns

CASE 41A

PLASTIC

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are readily solderable

POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be

positive with respect to anode

MOUNTING POSITION: Any

WAFER FAB LOCATION: Phoenix, Arizona

ASSEMBLY/TEST LOCATION: Guadalajara, Mexico

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (1)

1500

Watts

@ T ≤ 25°C

Steady State Power Dissipation

Watts

@ T ≤ 75°C, Lead Length = 3/8″

Derated above T = 75°C

mW/°C

Forward Surge Current (2)

200

Amps

FSM

@ T = 25°C

Operating and Storage Temperature Range

T , T

J stg

– 65 to +175

°C

Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C

NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.

NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

Devices listed in bold, italic are Motorola preferred devices.

Motorola TVS/Zener Device Data

500 Watt Peak Power Data Sheet

4-1

12 3 4 5 6

中文翻译

下载PDF

与1N6373RL4相关器件

型号	品牌	获取价格	描述	数据表
1N6373RL4G	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6373TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6374	NJSEMI	获取价格	1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO
1N6374	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1N6374	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
1N6374	ONSEMI	获取价格	1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors
1N6374	MOTOROLA	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6374	FREESCALE	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6374/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6374/100-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

与1N6373RL4相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373RL4

1N6373RL4 技术参数

1N6373RL4 数据手册

与1N6373RL4相关器件

与1N6373RL4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373RL4

1N6373RL4 技术参数

1N6373RL4 数据手册

与1N6373RL4相关器件

与1N6373RL4相关文章

您还可以找

您在本页遇到什么问题？