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1N6373G

更新时间： 2024-02-18 05:29:52
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

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1N6373G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：7.17其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
最小击穿电压：6 V外壳连接：ISOLATED
最大钳位电压：9.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：5 V子类别：Transient Suppressors
表面贴装：NO技术：ZENER
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N6373G 数据手册

 浏览型号1N6373G的Datasheet PDF文件第2页浏览型号1N6373G的Datasheet PDF文件第3页浏览型号1N6373G的Datasheet PDF文件第4页浏览型号1N6373G的Datasheet PDF文件第5页浏览型号1N6373G的Datasheet PDF文件第6页浏览型号1N6373G的Datasheet PDF文件第7页 
1N6373 − 1N6381 Series  
(ICTE−5 − ICTE−36,  
MPTE−5 − MPTE−45)  
1500 Watt Peak Power  
Mosorbt Zener Transient  
Voltage Suppressors  
http://onsemi.com  
Unidirectional*  
Cathode  
Anode  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high−energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetict axial leaded package and are ideally-suited for use in  
communication systems, numerical controls, process controls,  
medical equipment, business machines, power supplies and many  
other industrial/consumer applications, to protect CMOS, MOS and  
Bipolar integrated circuits.  
AXIAL LEAD  
CASE 41A  
PLASTIC  
MARKING DIAGRAMS  
A
MPTE  
−xx  
1N  
63xx  
YYWWG  
G
Specification Features  
• Working Peak Reverse Voltage Range − 5.0 V to 45 V  
• Peak Power − 1500 Watts @ 1 ms  
A
ICTE  
−xx  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 mA Above 10 V  
YYWWG  
G
A
= Assembly Location  
• Response Time is Typically < 1 ns  
• Pb−Free Packages are Available*  
MPTE−xx = ON Device Code  
1N63xx = JEDEC Device Code  
ICTE−xx = ON Device Code  
Mechanical Characteristics  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
(Note: Microdot may be in either location)  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16″ from the case for 10 seconds  
ORDERING INFORMATION  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
†
Device  
Package  
Shipping  
MPTE−xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
MPTE−xxRL4, G  
ICTE−xx, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
Axial Lead  
(Pb−Free)  
500 Units/Box  
ICTE−xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
1N63xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
1N63xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
1N6373/D  
12345678

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