Datasheet > 1N6373

1N6373

更新时间： 2024-11-08 06:23:07

品牌	Logo	应用领域
MDE		/
页数	文件大小	规格书
2页	38K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6373 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

ICTE5.0 to ICTE15C MPTE-5 to MPTE-45

1N6373 to 1N6381 and 1N6382 to 1N6389

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

STANDOFF VOLTAGE- 5.0 to 45.0V

1500 Watt Peak Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

• Glass passivated chip junction in Molded Plastic package

• 1500W surge capability at 1ms

• Excellent clamping capability

• Low zener inpedance

• Fast response time: typically less than

1.0 ps from 0 volts to BV min.

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

250°C/10 seconds/ .375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

• Includes 1N6373 thru 1N6385

MECHANICAL DATA

Case: JEDEC DO-201 Molded plastic

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.045 ounces, 1.2 grams

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 1500

SEE TABLE 1

5.0

UNITS

Watts

Amps

Watts

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms

(NOTE 1)

P_PPM

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

I_FSM

200

Amps

Maximum instantaneous forward voltage at 100A for

unidirectional only

V_F

3.5

Volt

°C

Operatings and Storage Temperature Range

T_J, T_STG

-55 +175

NOTES:

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

中文翻译

下载PDF

与1N6373相关器件

型号	品牌	获取价格	描述	数据表
1N6373/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/100-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/1-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppres
1N6373/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/4E-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/4G-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6373/51-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

与1N6373相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

17
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373

1N6373 数据手册

与1N6373相关器件

与1N6373相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373

1N6373 数据手册

与1N6373相关器件

与1N6373相关文章

您还可以找

您在本页遇到什么问题？