Datasheet > 1N6373/51

1N6373/51

更新时间： 2024-11-24 18:39:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	62K
描述
Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N6373/51 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.26
最大钳位电压：	7.1 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e0	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	5 V	子类别：	Transient Suppressors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

1N6373/51 数据手册

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386

Vishay Semiconductors

formerly General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

Stand Off Voltage 5.0 to 18V

Peak Pulse Power 1500W

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

Case Style 1.5KE

•

1500W peak pulse power capabililty with a 10/1000µs

waveform, repetition rate (duty cycle): 0.05%

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

1.0 (25.4)

MIN.

• Ideal for data and bus line applications

• High temperature soldering guaranteed:

265^OC/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

0.210 (5.3)

0.190 (4.8)

DIA.

• Includes 1N6373 thru 1N6386

0.375 (9.5)

0.285 (7.2)

Mechanical Data

Case: Molded plastic body over passivated junction

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: For unidirectional types the color band

denotes the cathode, which is positive with respect

to the anode under normal TVS operation

1.0 (25.4)

MIN.

Mounting Position: Any

Weight: 0.045 oz., 1.2 g

0.042 (1.07)

0.038 (0.96)

DIA.

Packaging Codes – Options (Antistatic):

51 – 1K per Bulk box, 10K/carton

Dimensions in inches and (millimeters)

54 – 1.4K per 13" paper Reel

(52mm horiz. tape), 4.2K/carton

73 – 1K per horiz. tape & Ammo box, 10K/carton

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Minimum 1500

See Table 1 & 2

6.5

Unit

Peak pulse power dissipation

P_PPM

with a 10/1000µs waveform⁽¹⁾(Fig. 1)

Peak pulse current wih a 10/1000µs waveform⁽¹⁾(Fig. 3)

I_PPM

Steady state power dissipation,

T_L= 75^OC, at lead lengths 0.375” (9.5mm)

P_M(AV)

Peak forward surge current, 8.3ms single half sine-wave

unidirectional only⁽²⁾

I_FSM

200

Maximum instantaneous forward voltage

at 100A for unidirectional only

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

^OC

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum

Document Number 88356

23-May-03

www.vishay.com

12 3 4

中文翻译

下载PDF

与1N6373/51相关器件

型号	品牌	获取价格	描述	数据表
1N6373/51-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/53-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6373/54-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/58-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/60	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/62	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS

与1N6373/51相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/51

1N6373/51 技术参数

1N6373/51 数据手册

与1N6373/51相关器件

与1N6373/51相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/51

1N6373/51 技术参数

1N6373/51 数据手册

与1N6373/51相关器件

与1N6373/51相关文章

您还可以找

您在本页遇到什么问题？