Datasheet > 1N6373/70

1N6373/70

更新时间： 2024-11-25 08:08:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	93K
描述
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6373/70 数据手册

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

Case Style 1.5KE

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

V_WM

P_PPM

P_D

5.0 V to 18 V

1500 W

6.5 W

I_FSM

200 A

T_Jmax.

175 °C

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC-Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use C suffix (e.g. ICTE-18C).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

1500

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 8)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 100 A for uni-directional only

Operating junction and storage temperature range

See next table

6.5

P_D

I_FSM

200

V_F

3.5

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum

Document Number: 88356

Revision: 12-Feb-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与1N6373/70相关器件

型号	品牌	获取价格	描述	数据表
1N6373/71	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/71-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/72	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/72-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6373/73-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/74	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/74-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/90-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/91	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS

与1N6373/70相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/70

1N6373/70 数据手册

与1N6373/70相关器件

与1N6373/70相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/70

1N6373/70 数据手册

与1N6373/70相关器件

与1N6373/70相关文章

您还可以找

您在本页遇到什么问题？