Datasheet > 1N6373/D

1N6373/D

更新时间： 2024-11-23 23:18:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	60K
描述
1500 Watt MOSORB， Zener Transient Voltage Suppressors Unidirectional and Bidirectional

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6373/D 数据手册

MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

1N6373A

SERIES

1500 WATT

1500 Watt MOSORB

GENERAL DATA APPLICABLE TO ALL SERIES IN

THIS GROUP

PEAK POWER

Zener Transient Voltage Suppressors

Unidirectional and Bidirectional

MOSORB

ZENER OVERVOLTAGE

TRANSIENT

SUPPRESSORS

6.2–250 VOLTS

1500 WATT PEAK POWER

5 WATTS STEADY STATE

Mosorb devices are designed to protect voltage sensitive components from high volt-

age, high energy transients. They have excellent clamping capability, high surge capabili-

ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,

cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use

in communication systems, numerical controls, process controls, medical equipment,

business machines, power supplies and many other industrial/consumer applications, to

protect CMOS, MOS and Bipolar integrated circuits.

Specification Features:

• Standard Voltage Range — 6.2 to 250 V

• Peak Power — 1500 Watts @ 1 ms

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 µA Above 10 V

• UL Recognition

• Response Time is Typically < 1 ns

CASE 41A

PLASTIC

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are readily solderable

POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be

positive with respect to anode

MOUNTING POSITION: Any

WAFER FAB LOCATION: Phoenix, Arizona

ASSEMBLY/TEST LOCATION: Guadalajara, Mexico

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (1)

1500

Watts

@ T ≤ 25°C

Steady State Power Dissipation

Watts

@ T ≤ 75°C, Lead Length = 3/8″

Derated above T = 75°C

mW/°C

Forward Surge Current (2)

200

Amps

FSM

@ T = 25°C

Operating and Storage Temperature Range

T , T

J stg

– 65 to +175

°C

Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C

NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.

NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

Devices listed in bold, italic are Motorola preferred devices.

Motorola TVS/Zener Device Data

500 Watt Peak Power Data Sheet

4-1

12 3 4 5 6

中文翻译

下载PDF

与1N6373/D相关器件

型号	品牌	获取价格	描述	数据表
1N6373_05	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6373A	MOTOROLA	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6373A	FREESCALE	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6373BK	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon
1N6373E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS
1N6373-E3/1	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppres
1N6373-E3/100	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373-E3/4	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppres
1N6373-E3/4E	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373-E3/4F	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

与1N6373/D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/D

1N6373/D 数据手册

与1N6373/D相关器件

与1N6373/D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373/D

1N6373/D 数据手册

与1N6373/D相关器件

与1N6373/D相关文章

您还可以找

您在本页遇到什么问题？