1N60PG-T92-R

更新时间： 2024-01-19 02:13:15

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
6页	270K
描述
1.2A, 600V N-CHANNEL POWER MOSFET

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技术参数
数据手册

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1N60PG-T92-R 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

1N60PG-T92-R 数据手册

1N60P

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

600

10 μA

100 nA

-100 nA

V/℃

V_DS=600V, V_GS=0V

V_GS=30V, V_DS=0V

V_GS=-30V, V_DS=0V

Forward

Reverse

Gate-Source Leakage Current

I_GSS

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JI_D=250μA

0.4

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

2.0

4.0

9.3 11.5

V_GS=10V, I_D=0.6A

Ω

C_ISS

C_OSS

C_RSS

120 150 pF

20 25 pF

3.0 4.0 pF

V_DS=25V, V_GS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD=300V, I_D=1.2A, R_G=50Ω

(Note 2, 3)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

5.0 6.0 nC

_DS=480V, V_GS=10V, I_D=1.2A

Gate-Source Charge

Q_GS

Q_GD

1.0

2.6

(Note 2, 3)

Gate-Drain Charge

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS=0V, I_S=1.2A

1.4

1.2

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

4.8

Reverse Recovery Time

t_rr

V_GS=0V, I_S=1.2A

dI_F/dt=100A/μs (Note 1)

160

0.3

Reverse Recovery Charge

Q_RR

μC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-634.A

www.unisonic.com.tw

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