Datasheet > 1N60F

1N60F

更新时间： 2024-10-15 14:55:07

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	701K
描述
场效应晶体管

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1N60F 数据手册

1N60F

N-Channel Enhancement Mode Field Effect Transistor

FEATURES



RDS(ON) =9.3Ω@VGS = 10V.

Ultra Low gate charge (typical 5.0nC)

Low reverse transfer capacitance (CRSS = typical 3.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

600

±30

Gate -Source voltage

V_GS

Continuous Drain current T_C=25℃

Continuous Drain current T_C=100℃

Single Pulse Avalanche Energy(Note3)

Avalanche Energy,Repetitive(Note2)

Avalanche Current(Note2)

1.2

I_D

0.76

E_AS

E_AR

4.0

I_AR

1.2

ISD

Continuous Drain-Source Current

Pulsed Drain-Source Current

Peak Diode Recovery dv/dt(Note4)

Power Dissipation

1.2

ISM

4.8

dv/dt

4.5

V/ns

P_D

Derating Fcator above 25℃

Junction-to-Case

0.32

W/℃

℃/W

℃

R_θ

Junction-to-Ambient

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

-55 to +150

+150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C

4. ISD≤1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ =25°C

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