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1N5819LWT PDF预览

1N5819LWT

更新时间: 2024-11-13 18:09:35
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 536K
描述
SOD-523

1N5819LWT 数据手册

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1N5819LWT  
.
SCHOTTKY BARRIER DIODE  
FEATURES  
Low Forward Voltage Drop;  
Guard Ring Construction for Transient Protection;  
Small Surface Mount device  
Low Reverse Capacitance;  
Low Reverse Recover Time;  
SOD-523  
Marking: S4  
MECHANICAL DATA  
Case: SOD-523  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.005 grams (approximate)  
M
A
X
I
U
M
R
A
TI  
N
G
S
(Ta  
=
25  
un  
l
e
ss  
o
t
h
e
r
w
i
s
e
noted )  
Parameter  
Symbol  
VRRM  
Value  
40  
Unit  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRWM  
V
VR  
VR(RMS)  
IO  
RMS Reverse Voltage  
28  
350  
1
V
mA  
A
Forward Continuous current  
IFRM  
Repetitive Peak Forward Current @t≤1S  
Non- Repetitive Peak Forward Surge Current  
@t≤8.3mS Half Sine Wave  
IFSM  
15  
A
Pd  
Power Dissipation  
Thermal Resistance Junction To Ambient  
Junction Temperature  
150  
667  
mW  
℃/mW  
RθJA  
Tstg  
Tstg  
125  
Storage Temperature  
-55~150  
EL  
EC  
TRIAL CHARACTERISTICS (Ta=25)  
Parameter  
Symbol  
V(BR)  
Test Conditions  
IR=100uA  
VR=30V  
Min  
Typ  
Max Unit  
Reverse Voltage  
40  
V
5
VR=20V  
VR=30V  
IF=1mA  
IF=5mA  
IF=20mA  
IF=200mA  
2
5
Reverse current  
IR  
uA  
V
0.27  
0.32  
Forward Voltage  
VF  
0.37  
0.6  
CD  
VR=4V,f=1.0MHz  
Diode Capacitance  
50  
10  
pF  
nS  
trr  
IF=IR=200mA,Irr=0.1×IR,RL=100Ω  
Recover Reverse Time  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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