Datasheet > 1N5819PP

1N5819PP

更新时间： 2023-12-06 20:08:39

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	170K
描述
肖特基整流管

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中文翻译

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数据手册

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1N5819PP 数据手册

1N5819PP

Surface Mount Schottky Barrier Rectifier

PINNING

DESCRIPTION

Cathode

Anode

Transparent top view

Simplified outline DFN1608-2C and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Average Forward Rectified Current

I_F(AV)

Non-Repetitive Peak Forward Surge Current

(8.3 ms Single Half Sine-Wave)

I_FSM

Power Dissipation

P_tot

T_j

450

℃

Operating Junction Temperature Range

Storage Temperature Range

- 55 to + 125

T_stg

℃

Thermal Characteristics

Value

222

Parameter

Symbol

R_θJA

Unit

Typical Thermal Resistance - Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 1 mA

Forward Voltage

at I_F= 0.1 A

at I_F= 1 A

0.45

0.6

0.9

V_F

at I_F= 3 A

Reverse Current

at V_R= 40 V

at V_R= 4 V

I_R

0.05

0.075

at V_R= 6 V

Total Capacitance

at V_R= 4 V, f = 1 MHz

C_tot

120

1 / 3

Dated：26/07/2023 Rev：01

12 3

中文翻译

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