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1N5818 PDF预览

1N5818

更新时间: 2024-01-23 01:52:25
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安森美 - ONSEMI 二极管瞄准线
页数 文件大小 规格书
7页 76K
描述
Axial Lead Rectifiers

1N5818 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.6Base Number Matches:1

1N5818 数据手册

 浏览型号1N5818的Datasheet PDF文件第1页浏览型号1N5818的Datasheet PDF文件第2页浏览型号1N5818的Datasheet PDF文件第4页浏览型号1N5818的Datasheet PDF文件第5页浏览型号1N5818的Datasheet PDF文件第6页浏览型号1N5818的Datasheet PDF文件第7页 
1N5817, 1N5818, 1N5819  
125  
NOTE 3. — DETERMINING MAXIMUM RATINGS  
40 30 23  
Reverse power dissipation and the possibility of thermal  
runaway must be considered when operating this rectifier at  
115  
105  
95  
°
reverse voltages above 0.1 V  
. Proper derating may be  
RWM  
accomplished by use of equation (1).  
(1)  
T
=
=
=
T
− R  
P
− R  
P
A(max)  
q
q
JA R(AV)  
J(max)  
JA F(AV)  
where T  
Maximum allowable ambient temperature  
Maximum allowable junction temperature  
(125°C or the temperature at which thermal  
runaway occurs, whichever is lowest)  
A(max)  
R
(°C/W) = 110  
q
JA  
T
J(max)  
80  
60  
P
= Average forward power dissipation  
F(AV)  
85  
P
=
=
Average reverse power dissipation  
Junction−to−ambient thermal resistance  
R(AV)  
R
q
JA  
Figures 1, 2, and 3 permit easier use of equation (1) by  
taking reverse power dissipation and thermal runaway into  
consideration. The figures solve for a reference temperature  
as determined by equation (2).  
75  
3.0  
4.0 5.0  
7.0  
10  
15  
20  
2.0  
V , DC REVERSE VOLTAGE (VOLTS)  
R
Figure 1. Maximum Reference Temperature  
1N5817  
T
= T  
− R P  
q
JA R(AV)  
(2)  
R
J(max)  
125  
115  
Substituting equation (2) into equation (1) yields:  
40  
23  
30  
T
= T − R P  
q
JA F(AV)  
(3)  
A(max)  
R
°
Inspection of equations (2) and (3) reveals that T is the  
R
ambient temperature at which thermal runaway occurs or  
105  
95  
where T = 125°C, when forward power is zero. The  
J
R
(°C/W) = 110  
q
JA  
transition from one boundary condition to the other is  
evident on the curves of Figures 1, 2, and 3 as a difference  
in the rate of change of the slope in the vicinity of 115°C. The  
data of Figures 1, 2, and 3 is based upon dc conditions. For  
use in common rectifier circuits, Table 1 indicates suggested  
factors for an equivalent dc voltage to use for conservative  
design, that is:  
80  
60  
85  
75  
3.0  
4.0  
5.0  
7.0  
10  
15  
20  
30  
(4)  
V
= V  
x F  
R(equiv)  
in(PK)  
V , DC REVERSE VOLTAGE (VOLTS)  
R
The factor F is derived by considering the properties of the  
various rectifier circuits and the reverse characteristics of  
Schottky diodes.  
Figure 2. Maximum Reference Temperature  
1N5818  
125  
115  
40  
EXAMPLE: Find T  
for 1N5818 operated in a  
A(max)  
30  
23  
12−volt dc supply using a bridge circuit with capacitive filter  
°
such that I = 0.4 A (I  
= 0.5 A), I /I = 10, Input  
DC  
F(AV)  
(FM) (AV)  
Voltage = 10 V , R  
(rms) qJA  
= 80°C/W.  
105  
95  
Step 1. Find V  
Step 1. Find V  
. Read F = 0.65 from Table 1,  
= (1.41)(10)(0.65) = 9.2 V.  
R
(°C/W) = 110  
R(equiv)  
q
JA  
R(equiv)  
80  
60  
Step 2. Find T from Figure 2. Read T = 109°C  
R
R
Step 1. Find @ V = 9.2 V and R  
= 80°C/W.  
q
R
JA  
Step 3. Find P  
from Figure 4. **Read P  
= 0.5 W  
F(AV)  
(FM)  
F(AV)  
I
85  
@
= 10 and IF(AV) = 0.5 A.  
I
(AV)  
Step 4. Find T  
Step 4. Find T  
from equation (3).  
= 109 − (80) (0.5) = 69°C.  
A(max)  
A(max)  
75  
4.0 5.0  
7.0  
10  
15  
20  
V , DC REVERSE VOLTAGE (VOLTS)  
30  
40  
R
**Values given are for the 1N5818. Power is slightly lower for the  
1N5817 because of its lower forward voltage, and higher for the  
1N5819.  
Figure 3. Maximum Reference Temperature  
1N5819  
Table 1. Values for Factor F  
Full Wave, Bridge  
Half Wave  
Circuit  
Load  
Full Wave, Center Tapped*†  
Resistive  
Capacitive*  
Resistive  
0.5  
Capacitive  
Resistive  
1.0  
Capacitive  
Sine Wave  
0.5  
1.3  
1.5  
0.65  
0.75  
1.3  
1.5  
Square Wave  
**Note that V  
0.75  
0.75  
1.5  
†Use line to center tap voltage for V .  
2.0 V  
.
in  
R(PK)  
in(PK)  
http://onsemi.com  
3
 

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