Datasheet > 1N5711

1N5711

更新时间： 2025-09-19 20:02:55

品牌	Logo	应用领域
晶恒 - JINGHENG		/
页数	文件大小	规格书
2页	50K
描述
IF(mA):15; VRRM(V):70; IFSM(A):2.0; VF(V):1.0; IR@25℃(uA):0.2; OUTLINE:DO-35;

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1N5711 数据手册

1N5711, 1N6263

SMALL SIGNAL SCHOTTKY DIODES

T O R

FEATURES

DO-35

For general purpose applications

Metal-on-silicon junction Schottky barrier device which is protected by a

PN junction guard ring. The low forward voltage drop and fast switching

make it ideal for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level applications

These diodes are also available in the MinMELF case with type

designation LL5711 and LL6263.

1.083(27.5)

MIN

0.079(2.0)

MAX

DIA

0.150(3.8)

MAX

High temperature soldering guaranteed:260°C/10 seconds at terminals

Component in accordance to RoHS 2011/65/EU

MECHANICAL DATA

1.083(27.5)

MIN

Case: DO-35 glass case

0.020(0.52)

MAX

DIA

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

Dimensions in inches and (millimeters)

ABSOLUTE RATINGS(LIMITING VALUES)

Units

Value

Symbols

1N5711

VRRM

Peak Reverse Voltage

1N6263

VRRM

Power Dissipation (infinite Heat Sink)

Ptot

400

Forward Continuous Current

T^A=25°C

Maximum Single cycle surge 10ms square wave

Junction Temperature

2.0

150

FSM

°C

Storage Temperature Range

-55 to+150

°C

TSTG

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

ELECTRICAL CHARACTERISTICS

(Ratings at 25°C ambient temperature unless otherwise specified)

Symbols

Min.

Max.

Typ.

Unis

Reverse breakover voltage

at I^R=10mA

1N5711

1N6263

Leakage current at VR=50V

200

Forward voltage drop at IF=1mA

IF=15mA

0.41

1.0

Junction Capacitance at VR=0V ,f=1MHz

trr

2.0

Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR

Thermal resistance

400

°C/W

2-1

JINAN JINGHENG ELECTRONICS CO., LTD.

HTTP://WWW.JINGHENG.CN

REV:DEC-2017

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与1N5711相关器件

型号	品牌	获取价格	描述	数据表
1N5711#T25	AGILENT	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GLASS PACKAGE-2
1N5711,1N5712	TE	获取价格	General Purpose Axial Lead Glass Packaged Schottky Diodes
1N5711-1	CDI-DIODE	获取价格	SCHOTTKY BARRIER DIODES
1N5711-1	MICROSEMI	获取价格	SCHOTTKY BARRIER DIODES
1N5711-1	SENSITRON	获取价格	SWITCHING DIODE
1N5711-1/TR	MICROSEMI	获取价格	Rectifier Diode,
1N5711-13	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, DO-35
1N5711-1E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.033A, 50V V(RRM), Silicon, DO-204AH, ROHS COMPLIAN
1N5711-AR2	STMICROELECTRONICS	获取价格	SILICON, SIGNAL DIODE, DO-35
1N5711-AZ1	STMICROELECTRONICS	获取价格	SILICON, SIGNAL DIODE, DO-35