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1N5619USV PDF预览

1N5619USV

更新时间: 2024-11-04 13:03:39
品牌 Logo 应用领域
SENSITRON 整流二极管
页数 文件大小 规格书
3页 43K
描述
Rectifier Diode, 1 Element, 1A, Silicon

1N5619USV 技术参数

生命周期:Obsolete包装说明:O-MELF-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.11
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-MELF-N2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:0.25 µs表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

1N5619USV 数据手册

 浏览型号1N5619USV的Datasheet PDF文件第2页浏览型号1N5619USV的Datasheet PDF文件第3页 
1N5615/US thru 1N5623/US  
SENSITRON  
_
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5081, REV. –  
SJ  
SX  
SV  
Fast Recovery Rectifier  
Hermetic, non-cavity glass package  
Metallurgically bonded  
Operating and Storage Temperature: -65oC to +175oC  
TYPE  
NUMBER  
PEAK  
INVERSE  
VOLTAGE  
MAX. AVG.  
DC OUTPUT  
CURRENT  
MAXIMUM  
REVERSE  
CURRENT  
@ PIV  
MAX. PEAK  
FORWARD  
VOLTAGE  
(PULSED)  
PEAK  
1 CYCLE  
SURGE  
MAXIMUM  
REVERSE  
RECOVERY  
TIME  
THERM  
RESIS  
R
θJL  
CURRENT  
d=.375  
Trr  
IF=0.5A  
IRM=1A  
R(REC(=0.25A  
nsec  
Amps  
µAmps  
I
Volts  
200  
400  
55°C  
100°C  
25°C  
100°C  
V
A
Amps  
25  
°C/W  
1N5615  
1N5617  
1N5619  
1N5621  
1N5623  
150  
150  
250  
600  
1.0  
.75  
0.5  
25  
1.6  
3.0  
38  
800  
1000  
300  
500  
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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