Datasheet > 1N5620GP

1N5620GP

更新时间： 2024-01-17 01:31:36

品牌	Logo	应用领域
海湾 - GULFSEMI		二极管
页数	文件大小	规格书
2页	182K
描述
SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE：800V CURRENT: 1.0A

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1N5620GP 技术参数

生命周期：	Obsolete	包装说明：	O-MELF-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.63
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-MELF-N2	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	1 A
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
最大反向恢复时间：	2 µs	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	END
Base Number Matches：	1

1N5620GP 数据手册

1N5620GP

SINTERED GLASS JUNCTION

PLASTIC RECTIFIER

VOLTAGE：800V

CURRENT: 1.0A

DO-15\DO-204AC

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Low reverse current

Capability of meeting environmental standard of MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

units

1N5620GP

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

800

560

800

880

Maximum DC blocking Voltage

V_BR

Maximum Reverse Breakdown Voltage

I_R=50µA

Maximum Average Forward Rectified Current 3/8”lead

length at Ta=50℃

Peak Forward Surge Current 8.3ms single half sine-

wave superimposed on rated load

Maximum Forward Voltage at Forward Current 3.0A

and 25℃

I_FAV

I_FSM

V_F

1.0

1.3

1.0

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25℃

I_R

µA

25.0

Ta =100℃

Maximum Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

Trr

2.0

50.0

µS

Rth(ja)

Tstg, Tj

35.0

℃ /W

℃

Storage and Operating Junction Temperature

Note:

-65 to +175

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 12.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A1

www.gulfsemi.com

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与1N5620GP相关器件

型号	品牌	描述	获取价格	数据表
1N5620GP/100-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/4E-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/4H-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/53-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/54-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/56	VISHAY	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN	获取价格

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