1N5620GP

更新时间： 2024-02-13 06:13:30

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
4页	75K
描述
Glass Passivated Junction Rectifier

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技术参数
数据手册

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1N5620GP 技术参数

生命周期：	Obsolete	包装说明：	O-MELF-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.63
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-MELF-N2	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	1 A
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
最大反向恢复时间：	2 µs	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	END
Base Number Matches：	1

1N5620GP 数据手册

1N5614GP thru 1N5622GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

DO-204AC (DO-15)

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, I_Rless than 0.1 μA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

I_FSM

I_R

200 V to 1000 V

50 A

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

0.5 μA

V_F

1.2 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax.

175 °C

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT

(1)

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RMS

(1)

Maximum DC blocking voltage

V_DC

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

(1)

I_FSM

(1)

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Note

(1)

JEDEC registered values

Document Number: 88520

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与1N5620GP相关器件

型号	品牌	描述	获取价格	数据表
1N5620GP/100-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/4E-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/4H-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/53-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/54-E3	VISHAY	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5620GP/56	VISHAY	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN	获取价格

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