Datasheet > 1N5406

1N5406

更新时间： 2024-09-14 07:22:27

品牌	Logo	应用领域
平盛电子 - PFS		/
页数	文件大小	规格书
2页	162K
描述
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5406 数据手册

AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

VOLTAGE RANGE

CURRENT

50 to 1000 Volts

3.0 Ampere

1N5400 THRU 1N5408

DO-27

FEATURES

Low coat construction

1.0(25.4)

MIN.

Low forward voltage drop

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension

.375(9.5)

.335(8.5)

MECHANICAL DATA

.220(5.6)

.197(5.0)

DIA.

Case: Transfer molded plastic

Epoxy: UL94V-O rate flame retardant

Polarity: Color band denotes cathode end

Lead: Plated axial lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

1.0(25.4)

MIN.

.052(1.3)

.048(1.2)

DIA.

Weight: 0.042 ounce, 1.19 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load

For capacitive load derate current by 20%

SYMBOLS

UNIT

Volts

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

0.375”(9.5mm) lead length at T_A= 75℃

I_(AV)

3.0

Amps

Peak Forward Surge Current

8.3mS single half sine wave superimposed on

rated load (JEDEC method)

I_FSM

V_F

I_R

125

Amps

Volts

µA

Maximum Instantaneous Forward Voltage @ 3.0A

1.0

5.0

500

T_A= 25℃

T_A= 150℃

Maximum DC Reverse Current at Rated

DC Blocking Voltage per element

Maximum Full Load Reverse Current, full cycle average

0.375”(9.5mm)lead length at T_L=75℃

I_R(AV)

C_J

500

µA

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

R_θJA

℃/W

Operating Junction Temperature Range

Storage Temperature Range

Notes:

℃

T_J

-55 to +150

T_STG

1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

2. Thermal Resistance from junction to ambient at 0.375”(9.5mm) lead length, P.C.board mounted with 0.8”×0. 8”(20×

20mm) copper heat si nk.

Web Site:

WWW.PS-PFS.COM

中文翻译

下载PDF

与1N5406相关器件

型号	品牌	获取价格	描述	数据表
1N5406(G)	LGE	获取价格	暂无描述
1N5406/1	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/100-E3	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/51-E3	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/54-E3	VISHAY	获取价格	DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

与1N5406相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

80
AIC1781A 电池充电控制器深度解析
2024-09-03

70
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

117

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5406

1N5406 数据手册

与1N5406相关器件

与1N5406相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5406

1N5406 数据手册

与1N5406相关器件

与1N5406相关文章

您还可以找

您在本页遇到什么问题？