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1N5406 PDF预览

1N5406

更新时间： 2024-09-14 06:24:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 65K
描述
3.0A RECTIFIER

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1N5406 数据手册

 浏览型号1N5406的Datasheet PDF文件第2页 
1N5400 - 1N5408  
3.0A RECTIFIER  
Features  
·
·
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
·
Surge Overload Rating to 200A Peak  
Low Reverse Leakage Current  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
D
Mechanical Data  
DO-201AD  
Min  
·
·
Case: Molded Plastic  
Dim  
A
Max  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
25.40  
7.20  
¾
B
9.50  
1.30  
5.30  
·
·
·
·
Polarity: Cathode Band  
Weight: 1.1 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
C
1.20  
D
4.80  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5404  
1N  
5406  
1N  
5407  
1N  
5408  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
3.0  
V
A
Average Rectified Output Current  
@ TA = 105°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
1.0  
A
Forward Voltage  
@ IF = 3.0A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 150°C  
10  
100  
mA  
Cj  
Typical Junction Capacitance  
(Note 2)  
50  
25  
pF  
K/W  
°C  
RqJA  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
15  
Tj, TSTG  
-65 to +150  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS28007 Rev. E-2  
1 of 2  
1N5400-1N5408  
12

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1N5406 替代型号

型号 品牌 替代类型 描述 数据表
1N5406G-T DIODES

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 3.0A GLASS PASSIVATED RECTIFIER
1N5406RLG ONSEMI

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 Axial−Lead Standard Recovery Rectifiers
1N5406G ONSEMI

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1N5406/1 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/100-E3 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/4F VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/4G VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/51-E3 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/53 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/54 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/54-E3 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5406/58 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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