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1N5406

更新时间： 2024-11-20 06:20:43
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SECOS /
页数 文件大小 规格书
2页 186K
描述
VOLTAGE 50V ~ 1000V 3.0 AMP Silicon Rectifiers

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1N5406 数据手册

 浏览型号1N5406的Datasheet PDF文件第2页 
1N5400 THRU 1N5408  
VOLTAGE 50V ~ 1000V  
Elektronische Bauelemente  
3.0 AMP Silicon Rectifiers  
A suffix of "-C" indicates halogen-free & RoHS Compliant  
DO-27  
.220(5.6)  
.197(5.0)  
DIA.  
FEATURES  
1.0(25.4)  
MIN.  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
*
*
*
*
.375(9.5)  
.285(7.2)  
High Surge Current Capability  
1.0(25.4)  
MIN.  
.052(1.3)  
MECHANICAL DATA  
.048(1.2)  
DIA.  
Case: Molded Plastic  
*
Epoxy: UL 94V-0 Rate Flame Retardant  
*
*
Dimensions in inches and (millimeters)  
Lead: Axial Lead, Solder Able per MIL-STD-202,  
Method 208 Guaranteed  
Polarity: Color Band Denotes Cathode End  
Mounting Position: Any  
*
*
*
Weight: 1.10 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25oC ambient temperature unless otherwise specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
.375"(9.5mm) Lead Length at Ta=75 C  
3.0  
A
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
Maximum Instantaneous Forward Voltage at 3.0A  
A
V
200  
0.95  
5.0  
Maximum DC Reverse Current  
Ta=25 C  
at Rated DC Blocking Voltage  
Ta=100 C  
50  
Typical Junction Capacitance (Note 1)  
pF  
C/W  
C
40  
30  
Typical Thermal Resistance RθJA (Note 2)  
Operating and Storage Temperature Range TJ, TSTG  
-65 ~ +175  
NOTES:  
1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.  
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length.  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
12

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5406/54-E3 VISHAY

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 		DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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